X-On Electronics has gained recognition as a prominent supplier of VBE1206N MOSFETs across the USA, India, Europe, Australia, and various other global locations. VBE1206N MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

VBE1206N VBsemi Elec

Name: VBE1206N
Brand: VBsemi Elec
SKU: VBE1206N_VBsemi Elec
Availability: InStock
Rating: 5 (11 reviews)

VBE1206N electronic component of VBsemi Elec

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See Product Specifications

Part No.	VBE1206N
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	MOSFET N Channel 200V 30A(Tc) 4V @ 250uA 55mO @ 3A,10V TO252 RoHS
Datasheet:	VBE1206N Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.4014 ea
Line Total: USD 1.4

Availability - 29
Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ: 1 Multiples: 1
Pack Size: 1

VBE1206N More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

29

Ship by Fri. 06 Dec to Wed. 11 Dec

MOQ : 1
Multiples : 1

1 : USD 1.4014
10 : USD 1.373
30 : USD 1.3559
100 : USD 1.185

Specifications

Manufacturer
VBsemi Elec VBsemi Elec

Product Category
MOSFETs MOSFETs

Category
MOSFET MOSFET

Rohs
y y

Package
TO252 TO252

Brand Category
Vbsemi Elec Vbsemi Elec

Fet Type
NChannel NChannel

Drain To Source Voltagevdss
200 V 200 V

Continuous Drain Current Id @ 25°C
30 A (T C) 30 A (T C)

Vgsth Max @ Id
4V @ 250uA 4V @ 250uA

Rds On Max @ Id Vgs
55mO @ 3A,10V 55mO @ 3A,10V

Power Dissipation-Max Ta 25°C
96 W (Tc) 96 W (Tc)

Drain Source Voltage Vdss
200 V 200 V

Continuous Drain Current Id
30 A 30 A

Drain Source On Resistance Rdson@Vgs Id
55 mOhms @10V , 3A 55 mOhms @10V , 3A

Power Dissipation Pd
96 W 96 W

Gate Threshold Voltage Vgsth@Id
4 V @250uA 4 V @250uA

Type
N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

VBE1206N Alternative Parts

We are delighted to provide the VBE1206N from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VBE1206N and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The VBE1206N with MOSFET N Channel 200V 30A(Tc) 4V @ 250uA 55mO @ 3A,10V TO252 RoHS manufactured by VBsemi Elec is a power MOSFET designed for high-power applications such as switching AC adapters and automotive loads. It features a max drain-source Rds(on) of 55 mO, a drain source voltage of 200V, a current handling capacity of 30A(Tc), and a drain-source breakdown voltage of 4 volts at 250µA. Its package is a TO252 RoHS-compliant plastic-molded surface mount and lead-free package. The product is suitable for high-frequency switch mode and half bridge dc-dc converters.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
29 Ship by Fri. 06 Dec to Wed. 11 Dec MOQ : 1 Multiples : 1	1 : USD 1.4014 10 : USD 1.373 30 : USD 1.3559 100 : USD 1.185

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