The VBE1410 with MOSFET N Trench 40V 55A 2.5V @ 250uA 14 mΩ @ 37A,4.5V TO-252 RoHS is a power MOSFET device manufactured by VBsemi Elec. This power MOSFET has a maximum drain-source voltage of 40V, a drain current of 55A, a Gate threshold voltage of 2.5V with a gate-source leakage current of 250uA, an on resistance of 14 mΩ @ 37A, and a drain-gate voltage of 4.5V. It is packaged in a TO-252 RoHS compliant package. This device is widely used for high current applications such as DC/DC converters, motor control, LED lighting, industrial & ITE power supplies, as well as high-voltage, high-switching frequency applications.