X-On Electronics has gained recognition as a prominent supplier of VBM1101M MOSFETs across the USA, India, Europe, Australia, and various other global locations. VBM1101M MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

VBM1101M VBsemi Elec

Name: VBM1101M
Brand: VBsemi Elec
SKU: VBM1101M_VBsemi_Elec
Availability: OutOfStock
Rating: 5 (11 reviews)

VBM1101M electronic component of VBsemi Elec

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See Product Specifications

Part No.	VBM1101M
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	MOSFET N Channel 100V 18A 4V @ 250uA 92mO @ 18A,10V TO-220AB RoHS
Datasheet:	VBM1101M Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.6148 ea
Line Total: USD 0.61

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

VBM1101M More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 14 Mar to Wed. 19 Mar MOQ : 1 Multiples : 1	1 : USD 0.6148 10 : USD 0.496 30 : USD 0.4377 100 : USD 0.3775 500 : USD 0.3425 1000 : USD 0.3249

Specifications

Manufacturer VBsemi Elec VBsemi Elec
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y
Package TO - 220AB TO - 220AB
Brand Category Vbsemi Elec Vbsemi Elec
Fet Type N Channel N Channel
Drain To Source Voltagevdss 100 V 100 V
Continuous Drain Current Id @ 25°C 18 A 18 A
Vgsth Max @ Id 4V @ 250uA 4V @ 250uA
Rds On Max @ Id Vgs 92mO @ 18A,10V 92mO @ 18A,10V
Power Dissipation-Max Ta 25°C 105 W 105 W
Drain Source Voltage Vdss 100 V 100 V
Continuous Drain Current Id 18 A 18 A
Drain Source On Resistance Rdson@Vgs Id 92 mOhms @10V , 18A 92 mOhms @10V , 18A
Power Dissipation Pd 105 W 105 W
Gate Threshold Voltage Vgsth@Id 4 V @250uA 4 V @250uA
Type N Channel N Channel

We are delighted to provide the VBM1101M from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VBM1101M and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

.The VBM1101M with MOSFET N Channel 100V 18A 4V @ 250uA 92mO @ 18A,10V TO-220AB RoHS is a voltage controlled field effect transistor manufactured by VBsemi Elec. It is designed to provide fast switching of high current using a low voltage gate signal. This unit has a drain current rating of 18A and a drain-source voltage of 100V. The RDS(on) resistance is 92mO @ 18A, 10V and has a gate threshold voltage of 4V @ 250uA. It is encased in an industry-standard TO-220AB RoHS package for added strength and durability.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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