VS-15ETH06PbF, VS-15ETH06-N3, VS-15ETH06FPPbF, VS-15ETH06FP-N3
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Vishay Semiconductors
Hyperfast Rectifier, 15 A Fred Pt
FEATURES
Hyperfast recovery time
Low forward voltage drop
175 C operating junction temperature
Low leakage current
TO-220AC TO-220 FULL-PAK
Single die center tap module
Base
Fully isolated package (V = 2500 V )
INS RMS
cathode
2
UL E78996 pending Available
Designed and qualified according to
JEDEC -JESD 47
Material categorization: for definitions of compliance
1
1 3 3
Cathode Cathode Anode
Anode please see www.vishay.com/doc?99912
VS-15ETH06PbF VS-15ETH06FPPbF
DESCRIPTION / APPLICATIONS
VS-15ETH06-N3 VS-15ETH06FP-N3
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
PRODUCT SUMMARY
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
Package TO-220AC, TO-220FP
guarantee the best overall performance, ruggedness and
I 15 A
F(AV)
reliability characteristics.
V 600 V
R
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
V at I 1.3 V
F F
diodes.
t typ. 22 ns
rr
Their extremely optimized stored charge and low recovery
T max. 175 C
J
current minimize the switching losses and reduce over
Diode variation Single die
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS
Peak repetitive reverse voltage V 600 V
RRM
T = 140 C
C
Average rectified forward current I 15
F(AV)
T = 80 C (FULL-PAK)
C
T = 25 C 120 A
J
Non-repetitive peak surge current I
FSM
T = 25 C (FULL-PAK) 180
J
Peak repetitive forward current I 30
FM
Operating junction and storage temperatures T , T -65 to +175 C
J Stg
ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified)
J
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, blocking voltage V , V I = 100 A 600 - -
BR R R
I = 15 A - 1.8 2.2 V
F
Forward voltage V
F
I = 15 A, T = 150 C - 1.3 1.6
F J
V = V rated - 0.2 50
R R
Reverse leakage current I A
R
T = 150 C, V = V rated - 30 500
J R R
Junction capacitance C V = 600 V - 20 - pF
T R
Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH
S
Revision: 09-Jul-15 Document Number: 94002
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VS-15ETH06PbF, VS-15ETH06-N3, VS-15ETH06FPPbF, VS-15ETH06FP-N3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified)
C
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
I = 1 A, dI /dt = 100 A/s, V = 30 V - 22 30
F F R
I = 15 A, dI /dt = 100 A/s, V = 30 V - 28 35
F F R
Reverse recovery time t ns
rr
T = 25 C -29 -
J
T = 125 C - 75 -
J
I = 15 A
F
T = 25 C - 3.5 -
J
Peak recovery current I dI /dt = 200 A/s A
RRM F
T = 125 C - 7 -
J
V = 390 V
R
T = 25 C - 57 -
J
Reverse recovery charge Q nC
rr
T = 125 C - 300 -
J
Reverse recovery time t -51 - ns
rr
I = 15 A
F
Peak recovery current I T = 125 C dI /dt = 800 A/s -20 - A
RRM J F
V = 390 V
R
Reverse recovery charge Q - 580 - nC
rr
THERMAL MECHANICAL SPECIFICATIONS
PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
T , T -65 - 175 C
J Stg
temperature range
-1.0 1.3
Thermal resistance,
R
thJC
junction to case
(FULL-PAK) - 3.0 3.5
Thermal resistance,
C/W
R Typical socket mount - - 70
thJA
junction to ambient per leg
Thermal resistance, Mounting surface, flat, smooth
R -0.5 -
thCS
case to heatsink and greased
-2.0 - g
Weight
-0.07- oz.
6.0 12 kgf cm
Mounting torque -
(5.0) (10) (lbf in)
Case style TO-220AC 15ETH06
Marking device
Case style TO-220 FULL-PAK 15ETH06FP
100 1000
T = 175 C
J
100
T = 150 C
J
10
T = 125 C
J
T = 175 C
J
1
T = 150 C T = 100 C
J J
10
T = 25 C
J
0.1
T = 25 C
0.01 J
0.001
1 0
0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600
V - Forward Voltage Drop (V) V - Reverse Voltage (V)
F R
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 09-Jul-15 Document Number: 94002
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
I - Instantaneous Forward
F
Current (A)
I - Reverse Current (A)
R