1N4148WS www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES Silicon epitaxial planar diode Fast switching diodes AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified MARKING (example only) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 X Y 22610 MECHANICAL DATA Bar = cathode marking Case: SOD-323 XY = type code Weight: approx. 4.3 mg Packaging codes / options: DESIGN SUPPORT TOOLS click logo to get started 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box Models Available PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS 1N4148WS-E3-08 or 1N4148WS-E3-18 1N4148WS Single A2 Tape and reel 1N4148WS-HE3-08 or 1N4148WS-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 75 R V Repetitive peak reverse voltage V 100 RRM Average rectified current half wave f 50 Hz I 150 (1) F(AV) rectification with resistive load mA Surge forward current t < 1 s and T = 25 C I 350 j FSM (1) Power dissipation P 200 mW tot Note (1) Valid provided that electrodes are kept at ambient temperature. THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 650 K/W thJA Junction temperature T 150 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +150 C op Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 2.3, 06-Jul-17 Document Number: 85751 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 1N4148WS www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 10 mA V 1V F F Forward voltage I = 100 mA V 1.2 V F F V = 20 V I 25 nA R R V = 75 V I 5 R R Leakage current V = 100 V I 100 A R R V = 20 V, T = 150 C I 50 R j R Diode capacitance V = V = 0 V C 4pF F R D Tested with 50 mA pulses, Voltage rise when switching ON t = 0.1 s, rise time < 30 ns, V 2.5 V p fr f = (5 to 100) kHz p I = 10 mA, i = 1 mA, V = 6 V, F R R Reverse recovery time t 4ns rr R = 100 L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 3 250 10 200 2 10 T = 100 C T = 25 C j j 150 10 100 1 -1 50 10 -2 0 10 0 50 100 150 200 0 1 2 20324 T - Ambient Temperature (C) 17437 V (V) amb F Fig. 1 - Forward Characteristics Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 4 10 T = 25 C T = 25 C 5 j j 1.1 f = 1 kHz f = 1 MHz 2 3 10 1.0 5 2 2 0.9 10 5 2 0.8 10 5 0.7 2 -2 -1 2 082416 0 10 1011100 I (mA) 17440 V (V) 17438 F R Fig. 2 - Dynamic Forward Resistance vs. Forward Current Fig. 4 - Relative Capacitance vs. Reverse Voltage Rev. 2.3, 06-Jul-17 Document Number: 85751 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I (mA) R () F f C (V ) P - Power Dissipation (mW) D R tot C (0 V) D