X-On Electronics has gained recognition as a prominent supplier of 1N4448TAP Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. 1N4448TAP Diodes - General Purpose, Power, Switching are a product manufactured by Vishay. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

1N4448TAP Vishay

1N4448TAP electronic component of Vishay
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Part No.1N4448TAP
Manufacturer: Vishay
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching Vr/75V Io/150mA
Datasheet: 1N4448TAP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1824 ea
Line Total: USD 0.18 
Availability - 65307
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
426
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 10
Multiples : 10
10 : USD 0.0322
100 : USD 0.0316
300 : USD 0.0311
1000 : USD 0.0306

65307
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1824
10 : USD 0.1375
100 : USD 0.0744
1000 : USD 0.0407
2500 : USD 0.0337
10000 : USD 0.0266
25000 : USD 0.0239
50000 : USD 0.021
100000 : USD 0.0197

1276
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 0.168
3 : USD 0.1302
10 : USD 0.1036
25 : USD 0.077
100 : USD 0.0546

   
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RoHS - XON
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Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Height
Length
Width
Brand
Cnhts
Hts Code
Operating Temperature Range
Mxhts
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We are delighted to provide the 1N4448TAP from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N4448TAP and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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333 3 1N4448 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diodes FEATURES Silicon epitaxial planar diodes Material categorization: for definitions of compliance please se e www.vishay.com/doc 99912 APPLICATIONS Extreme fast switches ADDITIONAL RESOURCES 3D Models MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: approx. 125 mg Cathode band color: black Packaging codes / options: TR/10K per 13 reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE PART ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS 1N4448 1N4448TAP or 1N4448TR V4448 Single Tape and reel / ammopack ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V 100 V RRM Reverse voltage V 75 V R Peak forward surge current t = 1 s I 2A p FSM Repetitive peak forward current I 500 mA FRM Forward continuous current I 300 mA F Average forward current V = 0 I 150 mA R F(AV) l = 4 mm, T = 45 C P 440 mW L tot Power dissipation l = 4 mm, T 25 C P 500 mW L tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air l = 4 mm, T = constant R 350 K/W L thJA Junction temperature T 175 C j Storage temperature range T -65 to +150 C stg Rev. 1.4, 24-Feb-2020 Document Number: 81858 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D 1N4448 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 5 mA V 0.620 0.720 V F F Forward voltage I = 100 mA V 1V F F V = 20 V I 25 nA R R Reverse current V = 20 V, T = 150 C I 50 A R j R V = 75 V I 5A R R I = 100 A, t /T = 0.01, R p Breakdown voltage V 100 V (BR) t = 0.3 ms p Diode capacitance V = 0, f = 1 MHz, V = 50 mV C 4pF R HF D Rectification efficiency V = 2 V, f = 100 MHz r45 % HF I = I = 10 mA, i = 1 mA t 8ns F R R rr Reverse recovery time I = 10 mA, V = 6 V, F R t 4ns rr i = 0.1 x I , R = 100 R R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1.2 1.0 I = 100 mA F T = 25 C j 100 0.8 10 mA 0.6 1m A Scattering Limit 10 0.4 0.1 mA 0.2 1 0 - 30 0 30 60 90 120 1 100 10 94 9098 V - Reverse Voltage (V) 94 9169 T - Junction Temperature (C) R j Fig. 1 - Forward Voltage vs. Junction Temperature Fig. 3 - Reverse Current vs. Reverse Voltage 1000 1N4448 100 Scattering Limit 10 1 T = 25 C j 0.1 2.0 0 0.4 0.8 1.2 1.6 94 9171 V - Forward Voltage (V) F Fig. 2 - Forward Current vs. Forward Voltage Rev. 1.4, 24-Feb-2020 Document Number: 81858 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) V- Forward Voltage (V) F F I - Reverse Current (nA) R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
BC COMPONENTS
BC COMPONENTS (VISHAY)
BCC
BEYSCHLAG
DALE
DALE (VISHAY)
DLE
DRALORIC / VISHAY
General Semi
GENERAL SEMI.
GENERAL SEMICONDUCTOR (VISHAY)
GS
HUNTINGTON ELECTRIC
Micro-Measurements (Division of Vishay Precision Group)
ROEDERSTEIN
ROEDERSTEIN / VISHAY
SFERNICE (VISHAY)
SFR
SILICONIX
SILICONIX (VISHAY)
SIX
SPD
SPECTROL
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SPP
SPRAGUE (VISHAY)
TECHNO
VIR
Vishay BC Components
Vishay Beyschlag
Vishay Cera-Mite
Vishay Dale
Vishay Draloric
Vishay Electro-Films
Vishay Huntington
Vishay Mills
Vishay Milwaukee
Vishay Polytech
Vishay Roederstein
Vishay Sfernice
Vishay Siliconix
Vishay Spectrol
Vishay Sprague
Vishay Tansitor
Vishay Techno
Vishay Thin Film
Vishay Vitramon
Vishay / BC Components
Vishay / Beyschlag
Vishay / Cera-Mite
Vishay / Dale
Vishay / Draloric
Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
Vishay / Mills
Vishay / Milwaukee
Vishay / Polytech
Vishay / Roederstein
Vishay / Sfernice
Vishay / Siliconix
Vishay / Spectrol
Vishay / Sprague
Vishay / Tansitor
Vishay / Techno
Vishay / Thin Film
Vishay / Vitramon
Vishay BC Components
Vishay Beyschlag
Vishay Beyschlag/Draloric/BC Components
VISHAY CERA-MITE
Vishay Dale
VISHAY DRALORIC
VISHAY ELECTRO-FILMS
VISHAY FOIL RESISTORS
Vishay Foil Resistors (Division of Vishay Precision Group)
VISHAY FOIL RESISTORS / VPG
Vishay General Semiconductor
Vishay Huntington Electric Inc.
Vishay Intertech
Vishay Micro-Measurements
VISHAY OPTO
Vishay Precision
Vishay Precision Group
Vishay Precision Group Foil Resistors
VISHAY ROEDERSTEIN
VISHAY SEMICONDUCTOR
Vishay Semiconductor Diodes Division
Vishay Semiconductor Opto Division
Vishay Semiconductors
Vishay Sfernice
Vishay Siliconix
VISHAY SMALL SIGNAL
VISHAY SPECIALTY CAPACITORS
Vishay Spectrol
Vishay Sprague
VISHAY TANSITOR
VISHAY TECHNO
Vishay Thin Film
Vishay Vitramon
VISHAY/BC COMPONENTS
Vishay/Beyschlag
Vishay/Dale
Vishay/General Semic
VISHAY/SILICONIX
VishayBC Components
VishayBeyschlag
VishayElectro-Films
VishayGeneral Semiconductor
VishaySemiconductors
VishaySprague
VishayVitramon
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VITRAMON (VISHAY)
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VITROMON
VSC
VSO
VSS
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