End of LifeAugust 2021 - Alternative Device:1.5KE Serie ICTE5 thru ICTE18C, 1N6373 thru 1N6386 www.vishay.com Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES Glass passivated chip junction Available in uni-directional and bi-directional 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % Excellent clamping capability Very fast response time Low incremental surge resistance Case Style 1.5KE Solder dip 275 C max. 10 s, per JESD 22-B106 AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS TYPICAL APPLICATIONS V 5.0 V to 18 V WM Use in sensitive electronics protection against voltage V (uni-directional) 6.0 V to 21.2 V BR transients induced by inductive load switching and lightin g V (bi-directional) 9.2 V to 21.2 V BR on ICs, MOSFET, signal lines of sensor units for consumer, P 1500 W computer, industrial, and telecommunication. PPM P 6.5 W D MECHANICAL DATA I 200 A FSM Case: 1.5KE, molded epoxy body over passivated junction T max. 175 C J Molding compound meets UL 94 V-0 flammability rating Polarity Uni-directional, bi-directional Base P/N-E3 - RoHS-compliant and commercial grad e Package 1.5KE Base P/NHE3 X - RoHS-compliant and AEC-Q101 qualified (X denotes revision code e.g. A, B, ...) DEVICES FOR BI-DIRECTION APPLICATIONS Terminals: matte tin plated leads, solderable per For bi-directional types, use C suffix (e.g. ICTE18C). J-STD-002 and JESD 22-B102 Electrical characteristics apply in both directions. E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: for uni-directional types the color band denotes cathode end, no marking on bi-directional types MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT (1) Peak pulse power dissipation with a 10/1000 s waveform (fig. 1) P 1500 W PPM (1) Peak pulse current with a 10/1000 s waveform (fig. 3) I See next table A PPM Power dissipation on infinite heatsink at T = 75 C (fig. 8) P 6.5 W L D (2) Peak forward surge current 8.3 ms single half sine-wave uni-directional only I 200 A FSM Maximum instantaneous forward voltage at 100 A for uni-directional only V 3.5 V F Operating junction and storage temperature range T , T -55 to +175 C J STG Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2 A (2) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum Revision: 01-Mar-2021 Document Number: 88356 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000End of LifeAugust 2021 - Alternative Device:1.5KE Serie ICTE5 thru ICTE18C, 1N6373 thru 1N6386 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (JEDEC REGISTERED DATA) (T = 25 C unless otherwise noted) A BREAKDOWN MAXIMUM MAXIMUM MAXIMUM MAXIMUM STAND-OFF VOLTAGE JEDEC GENERAL REVERSE CLAMPING CLAMPING PEAK VOLTAGE V AT 1.0 mA BR TYPE SEMICONDUCTOR LEAKAGE VOLTAGE VOLTAGE AT PULSE V WM (V) NUMBER PART NUMBER AT V AT I = 1.0 A I = 10 A CURRENT WM PP PP (V) I (A) V (V) V (V) I (A) MIN. D C C PP UNI-DIRECTIONAL TYPES (2) (2) 1N6373 ICTE5 5.0 6.0 300 7.1 7.5 160 1N6374 ICTE8 8.0 9.4 25.0 11.3 11.5 100 1N6375 ICTE10 10.0 11.7 2.0 13.7 14.1 90 1N6376 ICTE12 12.0 14.1 2.0 16.1 16.5 70 1N6377 ICTE15 15.0 17.6 2.0 20.1 20.6 60 1N6378 ICTE18 18.0 21.2 2.0 24.2 25.2 50 BI-DIRECTIONAL TYPES 1N6382 ICTE8C 8.0 9.4 50 11.4 11.6 100 1N6383 ICTE10C 10.0 11.7 2.0 14.1 14.5 90 1N6384 ICTE12C 12.0 14.1 2.0 16.7 17.1 70 1N6385 ICTE15C 15.0 17.6 2.0 20.8 21.4 60 1N6386 ICTE18C 18.0 21.2 2.0 24.8 25.5 50 Notes (1) C suffix indicates bi-directional (2) ICTE5 and 1N6373 are not available as bi-directional (3) Clamping factor: 1.33 at full rated power 1.20 at 50 % rated power clamping factor: the ratio of the actual V (clamping voltage) to the V C BR (breakdown voltage) as measured on a specific device ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE ICTE5-E3/54 0.968 54 1400 13 diameter paper tape and reel (1) ICTE5HE3 A/C 0.968 C 1400 13 diameter paper tape and reel Note (1) AEC-Q101 qualified Revision: 01-Mar-2021 Document Number: 88356 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000