333 3 1N914 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diodes FEATURES Fast switching speed High reliability High conductance For general purpose switching applications Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 ADDITIONAL RESOURCES 3D Models MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: approx. 125 mg Cathode band color: black Packaging codes / options: TR/10K per 13 reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE PART ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS 1N914 1N914TR or 1N914TAP 1N914 Single Tape and reel / ammopack ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V 100 V RRM Working peak reverse voltage V 75 V RWM DC blocking voltage V 75 V R RMS Reverse voltage V 53 V R(RMS) Forward continuous current I 300 mA F Half wave rectification with Average rectified current I 200 mA F(AV) resistive load and f > 50 MHz t = 1 s I 1A FSM Non repetitive peak forward surge current t = 1 s I 4A FSM Power dissipation l = 4 mm, T = 25 C P 500 mW L tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air l = 4 mm, T = constant R 300 K/W L thJA Junction temperature T 175 C j Storage temperature range T -65 to +175 C stg Rev. 2.0, 24-Feb-2020 Document Number: 85622 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D 1N914 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 10 mA V 1V F F Breakdown voltage I = 100 A V 100 V R (BR) V = 75 V I 5A R R Peak reverse current V = 20 V, T = 150 C I 50 A R j R V = 20 V I 25 nA R R Diode capacitance V = 0, f = 1 MHz C 4pF R D I = 10 mA, i = 1 mA, F R Reverse recovery time t 4ns rr V = 6 V, R = 100 R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1000 1N914 T = 25 C 100 j 100 Scattering Limit 10 Scattering Limit 10 1 T = 25 C j 1 0.1 2.0 1 100 10 0 0.4 0.8 1.2 1.6 94 9098 V - Reverse Voltage (V) 94 9170 1 V - Forward Voltage (V) F R Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Reverse Current vs. Reverse Voltage PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH) Cathode Identicfi ation 26 min. 1.024 3.9 max. 0.154 26 min. 1.024 3.1 min. 0.120 Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 Rev. 2.0, 24-Feb-2020 Document Number: 85622 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) F 0.6 max. 0.024 0.4 min. 0.015 I - Reverse Current (nA) R 1.7 0.067 1.3 0.050