VS-20ETF0..FPPbF Series, VS-20ETF0..FP-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 20 A FEATURES Glass passivated pellet chip junction 2 150 C max. operation junction temperature Designed and qualified according to 2 JEDEC -JESD 47 1 3 Fully isolated package (V = 2500 V ) INS RMS 3 1 UL E78996 approved Cathode Anode TO-220 FULL-PAK Available Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRODUCT SUMMARY APPLICATIONS Package TO-220FP These devices are intended for use in output rectification I 20 A F(AV) and freewheeling in inverters, choppers and converters as V 200 V, 400 V, 600 V well as in input rectification where severe restrictions on R conducted EMI should be met. V at I 1.3 V F F I 300 A FSM DESCRIPTION t 60 ns rr The VS-20ETF0..FP... fast soft recovery rectifier series has T max. 150 C J been optimized for combined short reverse recovery time Diode variation Single die and low forward voltage drop. Snap factor 0.6 The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 20 A F(AV) V 200 to 600 V RRM I 300 A FSM V 10 A, T = 25 C 1.2 V F J t 1 A, 100 A/s 60 ns rr T -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-20ETF02FPPbF, VS-20ETF02FP-M3 200 300 VS-20ETF04FPPbF, VS-20ETF04FP-M3 400 500 5 VS-20ETF06FPPbF, VS-20ETF06FP-M3 600 700 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I T = 51 C, 180 conduction half sine wave 20 F(AV) C 10 ms sine pulse, rated V applied 250 A Maximum peak one cycle non-repetitive RRM I FSM surge current 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated V applied 316 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 442 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 4420 A s Revision: 11-Feb-16 Document Number: 94095 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-20ETF0..FPPbF Series, VS-20ETF0..FP-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 20 A, T = 25 C 1.30 J Maximum forward voltage drop V V FM 60 A, T = 25 C 1.67 J Forward slope resistance r T = 150 C 12.5 m t J Threshold voltage V T = 150 C 0.9 V F(TO) J T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 5.0 J RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS I FM Reverse recovery time t 160 ns rr I at 20 A F pk t rr Reverse recovery current I 100 A/s 10 A rr t t a b t dir 25 C Reverse recovery charge Q 1.25 C rr dt Q rr Snap factor S Typical 0.6 I RM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 2.5 thJC junction to case Maximum thermal resistance, R 62 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, smooth, and greased 0.5 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 20ETF02FP Marking device Case style TO-220 FULL-PAK 20ETF04FP 20ETF06FP Revision: 11-Feb-16 Document Number: 94095 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000