2N4338 2N4340 2N4339 2N4341 www.centralsemi.com SILICON DESCRIPTION: N-CHANNEL JFETS The CENTRAL SEMICONDUCTOR 2N4338 Series devices are silicon N-Channel JFETs mounted in a hermetically sealed metal case designed for low level, low noise amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Gate-Drain Voltage V 50 V GD Gate-Source Voltage V 50 V GS Drain-Source Voltage V 50 V DS Gate Current I 50 mA G Power Dissipation P 325 mW D Operating and Storage Junction Temperature T , T -65 to +200 C J stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A 2N4338 2N4339 2N4340 2N4341 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX MIN MAX UNITS I V =30V, V =0 - 0.1 - 0.1 - 0.1 - 0.1 nA GSS GS DS I V =15V, V =0 0.2 0.6 0.5 1.5 1.2 3.6 3.0 9.0 mA DSS DS GS BV I=1.0A 50 - 50 - 50 - 50 - V GSS G V V =15V, I =0.1A 0.3 1.0 0.6 1.8 1.0 3.0 2.0 6.0 V GS(OFF) DS D y V =15V, f=1.0kHz 0.6 1.8 0.8 2.4 1.3 3.0 2.0 4.0 mS fs DS y V =15V, f=1.0kHz - 5.0 - 15 - 30 - 60 S os DS C V =15V, f=1.0MHz - 6.0 - 6.0 - 6.0 - 6.0 pF iss DS C V =15V, f=1.0MHz - 2.0 - 2.0 - 2.0 - 2.0 pF rss DS NF V =15V, f=1.0kHz, R=1.0M - 1.0 - 1.0 - 1.0 - 1.0 dB DS G R1 (3-August 2016)2N4338 2N4340 2N4339 2N4341 SILICON N-CHANNEL JFETS TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Source 2) Drain 3) Gate MARKING: FULL PART NUMBER R1 (3-August 2016) www.centralsemi.com