2N4857 2N4857A www.centralsemi.com N-CHANNEL DESCRIPTION: SILICON JFET The CENTRAL SEMICONDUCTOR 2N4857 and 2N4857A are N-Channel silicon JFETs designed for analog switching and chopper applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Drain-Source Voltage V 40 V DS Drain-Gate Voltage V 40 V DG Reverse Gate-Source Voltage V 40 V GSR Forward Gate Current I 50 mA GF Power Dissipation (T=25C) P 360 mW A D Operating and Storage Junction Temperature T , T -65 to +200 C J stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V =20V, V=0 0.25 nA GSS GS DS I V =20V, V =0, T=150C 0.5 A GSS GS DS A I V =15V, V=0 20 100 mA DSS DS GS I V =15V, V=10V 0.25 nA D(OFF) DS GS I V =15V, V =10V, T=150C 0.5 A D(OFF) DS GS A BV I =1.0A, V=0 40 V GSS G DS V V =15V, I=0.5nA 2.0 6.0 V GS(OFF) DS D V I =10mA, V=0 0.5 V DS(ON) D GS r V =0, I =0, f=1.0kHz 40 DS(ON) GS D C V =10V, V =0, f=1.0MHz (2N4857) 8.0 pF rss GS DS C V =10V, V =0, f=1.0MHz (2N4857A) 3.5 pF rss GS DS C V =10V, V =0, f=1.0MHz (2N4857) 18 pF iss GS DS C V =10V, V =0, f=1.0MHz (2N4857A) 10 pF iss GS DS t V =10V, V =6.0V, I=10mA 6.0 ns d DD GS(OFF) D t V =10V, V =6.0V, I=10mA 4.0 ns r DD GS(OFF) D t V =10V, V =6.0V, I =10mA (2N4857) 50 ns off DD GS(OFF) D t V =10V, V =6.0V, I =10mA (2N4857A) 40 ns off DD GS(OFF) D R0 (11-June 2012)2N4857 2N4857A N-CHANNEL SILICON JFET TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Source 2) Drain 3) Gate MARKING: FULL PART NUMBER R0 (11-June 2012) www.centralsemi.com