X-On Electronics has gained recognition as a prominent supplier of 2N5116-E3 JFET across the USA, India, Europe, Australia, and various other global locations. 2N5116-E3 JFET are a product manufactured by Vishay. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

2N5116-E3 Vishay

2N5116-E3 electronic component of Vishay
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See Product Specifications
Part No.2N5116-E3
Manufacturer: Vishay
Category: JFET
Description: JFET 30V 10pA
: Small signal NPN transistor used for general purpose switching and amplification applications.
Datasheet: 2N5116-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 85.7036 ea
Line Total: USD 85.7 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 85.7036
25 : USD 81.8824
50 : USD 81.4817
100 : USD 81.081
200 : USD 79.879
500 : USD 79.3724

   
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Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
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We are delighted to provide the 2N5116-E3 from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N5116-E3 and other electronic components in the JFET category and beyond.

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The 2N5116-E3 is a high-voltage N-channel enhancement-mode field-effect transistor from Vishay Semiconductor. It is manufactured in a D2pak surface-mount package and is suitable for use in vertical deflection applications. The device features a wide drain-source voltage range of 40V to 500V and a drain-source on-resistance of 4.5 ohms. The device is rated for continuous drain current of 120 mA and can support peak drain currents of up to 200 mA. It also features a low gate-source voltage of 2V, making it ideal for applications that require low power consumption. Additionally, its small size allows for easy handling and installation.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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