X-On Electronics has gained recognition as a prominent supplier of 2N7002E-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7002E-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2N7002E-T1-E3 Vishay

2N7002E-T1-E3 electronic component of Vishay
2N7002E-T1-E3 Vishay
2N7002E-T1-E3 MOSFETs
2N7002E-T1-E3  Semiconductors

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See Product Specifications
Part No. 2N7002E-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: 60V 240mA 3O@10V,250mA 350mW N Channel SOT-23 MOSFETs ROHS
200 mA, 60 V, N-channel logic level MOSFET in SOT-23 package, suitable for switching applications.
Datasheet: 2N7002E-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
365: USD 0.1781 ea
Line Total: USD 65.01 
Availability - 2754
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ: 365  Multiples: 1
Pack Size: 1
Availability Price Quantity
8730
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.2048

372104
Ship by Fri. 07 Mar to Tue. 11 Mar
MOQ : 1
Multiples : 1
1 : USD 0.4862
10 : USD 0.2713
100 : USD 0.2124
500 : USD 0.1529
3000 : USD 0.1529

8730
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.2048

2754
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 365
Multiples : 1
365 : USD 0.1781
500 : USD 0.1534
1000 : USD 0.1443
2000 : USD 0.1352

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the 2N7002E-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7002E-T1-E3 and other electronic components in the MOSFETs category and beyond.

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The 2N7002E-T1-E3 is a P-channel enhancement mode field-effect transistors (FETs) manufactured by Vishay. The device operates from -55°C to +150°C with a breakdown voltage of -20V.It is also RoHS-compliant. The 2N7002E-T1-E3 can handle up to 1A of continuous drain current at a drain-source voltage of -20V and offers an on-resistance (Rds) of just 0.66O, making it ideal for low power switching and low power analog circuits. Additionally, the 2N7002E-T1-E3 is designed with a low threshold voltage (2V) and an ultra-low capacitance (Ciss) of just 25pF, making it suitable for low-noise, high-speed applications. Applications include power management, LED lighting, and mobile device power switching.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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