2N7002E Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )I (mA) DS DS(on) D Definition 60 3 at V = 10 V 240 GS Low On-Resistance: 3 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage Compliant to RoHS Directive 2002/95/EC BENEFITS Low Offset Voltage TO-236 Low-Voltage Operation (SOT-23) Easily Driven Without Buffer High-Speed Circuits Marking Code: 7E G 1 Low Error Voltage 3 D APPLICATIONS S 2 Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers, Display, Top View Memories, Transistors, etc. Battery Operated Systems Ordering Information: 2N7002E-T1-E3 (Lead (Pb)-free) 2N7002E-T1-GE3 (Lead (Pb)-free and Halogen-free) Solid-State Relays ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage 60 DS V V Gate-Source Voltage 20 GS T = 25 C 240 A Continuous Drain Current (T = 150 C) I J D T = 70 C 190 mA A a Pulsed Drain Current I 1300 DM T = 25 C 0.35 A P Power Dissipation W D T = 70 C 0.22 A R Thermal Resistance, Junction-to-Ambient 357 C/W thJA T T Operating Junction and Storage Temperature Range - 55 to 150 C J, stg Notes: a. Pulse width limited by maximum junction temperature. Document Number: 70860 www.vishay.com S11-0183-Rev. F, 07-Feb-11 12N7002E Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) A Limits a Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V V = 0 V, I = 10 A Drain-Source Breakdown Voltage 60 68 DS GS D V V V = V , I = 250 A Gate-Threshold Voltage 12 2.5 GS(th) DS GS D I V = 0 V, V = 15 V Gate-Body Leakage 10 nA GSS DS GS V = 60 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 60 V, V = 0 V , T = 125 C 500 DS GS J V = 10 V, V = 7.5 V 800 1300 GS DS b I mA On-State Drain Current D(on) V = 4.5 V, V = 10 V 500 700 GS DS V = 10 V, I = 250 mA 1.2 3 GS D b R Drain-Source On-Resistance DS(on) V = 4.5 V, I = 200 mA 1.8 4 GS D b g V = 15 V, I = 200 mA 600 mS Forward Transconductance fs DS D Diode Forward Voltage V I = 200 mA, V = 0 V 0.85 1.2 V SD S GS a Dynamic Q Total Gate Charge 0.4 0.6 g V = 10 V, V = 4.5 V DS GS Q Gate-Source Charge 0.06 nC gs I 250 mA D Q Gate-Drain Charge 0.06 gd Input Capacitance C 21 iss Output Capacitance C V = 5 V, V = 0 V, f = 1 MHz 7 pF oss DS GS C Reverse Transfer Capacitance 2.5 rss a, c Switching t Turn-On Time 13 20 d(on) V = 10 V, R = 40 DD L ns I 250 mA, V = 10 V, R = 10 t Turn-Off Time D GEN g 18 25 d(off) Notes: a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: pulse width 300 s duty cycle 2 %. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 70860 2 S11-0183-Rev. F, 07-Feb-11