Ordering number : ENN5075 N-Channel Junction Silicon FET High-Frequency Amplifier, 2SK2539 Analog Switch Applications Features Package Dimensions Large y . fs unit:mm Small Ciss. 2050A Small-sized package permitting 2SK2539-applied 2SK2539 sets to be made small and slim. Adoption of FBET process. 0.4 0.16 3 0 to 0.1 0.95 1 0.95 2 1.9 2.9 1 : Source 2 : Drain 3 : Gate SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25C Plarameter Ssymbo Csondition Rtating Uni DVrain-to-Source Voltage 1V5 DSX GVate-to-Drain Voltage V15 GDS GIate Current 5Am G DIrain Current 5A0 m D APllowable Power Dissipation 2W00 m D C Jjunction Temperature T 150 Sgtorage Temperature Tst 55 to +150 C Electrical Characteristics at Ta = 25C Ratings Plarameter Ssymbo Condition Unit mpintxy ma GVate-to-Drain Breakdown Voltage I =10A, V=50 V1 (BR)GDS G DS GIate-to-Source Leakage Current V =10V, V=00 A1. n GSS GS DS ZIero-Gate Voltage Drain Current V =5V, V=*0 1*0.0 5A0.0 m DSS DS GS CVutoff Voltage V =5V, I=610A 40. 01. V3. GS(off) DS D Vyfs 1 =5V, I=410mA, f=1kHz 112Sm DS D Forward Transfer Admittance Vyfs 2 =5V, V=40, f=1kHz 192Sm DS GS * : The 2SK2539 is classified by I as follows : (unit : mA) Continued on next page. DSS 100.0 6 20.0106.0 7 32. 25.0 8 50. Marking : AK I rank : 6, 7, 8 DSS 2011, SCILLC. All rights reserved. Publication Order Number: www.onsemi.com Rev.0 I Page 1 of 3 I www.onsemi.com Jan-2011, Rev. 0 2SK2539/D 0.8 0.5 1.5 0.5 1.1 2.52SK2539 Continued from preceding page. Ratings Plarameter Ssymbo Condition Unit mpintxy ma Isnput Capacitance CVis =5V, V=90, f=1MHz 4F. p DS GS Rseverse Transfer Capacitance CVrs =5V, V=40, f=1MHz 1F. p DS GS Rev.0 I Page 2 of 3 I www.onsemi.com