2SK3488 Ordering number : EN7181A N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3488 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V 30 V DSS Gate-to-Source Voltage V 20 V GSS Drain Current (DC) I 2.5 A D Drain Current (Pulse) I PW 10s, duty cycle 1% 10 A DP 2 Mounted on a ceramic board (250mm0.8mm) 1.0 W Allowable Power Dissipation P D Tc=25C 3.5 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =30V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =1.3A 1.6 2.3 S DS D R (on)1 I =1.3A, V =10V 125 160 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =0.7A, V =4V 200 280 m DS D GS Marking : LE Continued on next page. 2011, SCILLC. All rights reserved. Publication Order Number: www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Jan-2011, Rev. 0 2SK3488/D2SK3488 Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Input Capacitance Ciss V =10V, f=1MHz 120 pF DS Output Capacitance Coss V =10V, f=1MHz 30 pF DS Reverse Transfer Capacitance Crss V =10V, f=1MHz 15 pF DS Turn-ON Delay Time t (on) See specified Test Circuit. 6 ns d Rise Time t See specified Test Circuit. 5 ns r Turn-OFF Delay Time t (off) See specified Test Circuit. 17 ns d Fall Time t See specified Test Circuit. 5 ns f Total Gate Charge Qg V =10V, V =10V, I =2.5A 3.6 nC DS GS D Gate-to-Source Charge Qgs V =10V, V =10V, I =2.5A 0.6 nC DS GS D Gate-to-Drain Miller Charge Qgd V =10V, V =10V, I =2.5A 0.5 nC DS GS D Diode Forward Voltage V I =2.5A, V =0V 0.9 1.2 V SD S GS Package Dimensions Switching Time Test Circuit unit : mm (typ) V =15V V 7007B-003 IN DD 10V 0V I =1.3A D V IN R =11.5 L D V OUT PW=10s D.C. 1% G 2SK3488 P.G 50 S I -- V I -- V D DS D GS 3.0 3.0 V =10V DS 2.5 2.5 5V 2.0 2.0 6V 8V 1.5 1.5 1.0 1.0 0.5 0.5 0 0 0 0.2 0.4 0.6 0.8 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Drain-to-Source Voltage, V -- V IT02698 Gate-to-Source Voltage, V -- V IT04291 DS GS Rev.0 I Page 2 of 4 I www.onsemi.com V =3V GS 25C 4V Tc=75C 75C 10V 25C Tc= --25C --25C Drain Current, I -- A D Drain Current, I -- A D