30TPS...PbF High Voltage Series Vishay High Power Products Phase Control SCR, 20 A DESCRIPTION/FEATURES 2 (A) The 30TPS...PbF High Voltage Series of silicon Pb-free controlled rectifiers are specifically designed for Available medium power switching and phase control RoHS* COMPLIANT applications. The glass passivation technology used has reliable operation up to 125 C junction temperature. 1 (K) (G) 3 TO-247AC Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP PRODUCT SUMMARY input diodes, switches and output rectifiers which are V at 20 A < 1.3 V T available in identical package outlines. I 300 A TSM This product has been designed and qualified for industrial V 800/1200 V RRM level and lead (Pb)-free (PbF suffix). MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS I Sinusoidal waveform 20 T(AV) A I 30 RMS V /V 800/1200 V RRM DRM I 300 A TSM V 20 A, T = 25 C 1.3 V T J dV/dt 500 V/s dI/dt 150 A/s T - 40 to 125 C J VOLTAGE RATINGS V /V , MAXIMUM V , MAXIMUM RRM DRM RSM I /I RRM DRM REPETITIVE PEAK AND NON-REPETITIVE PEAK PART NUMBER AT 125 C OFF-STATE VOLTAGE REVERSE VOLTAGE mA V V 30TPS08PbF 800 900 10 30TPS12PbF 1200 1300 * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94386 For technical questions, contact: diodes-tech vishay.com www.vishay.com Revision: 06-Jun-08 1 30TPS...PbF High Voltage Series Phase Control SCR, 20 A Vishay High Power Products ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average on-state current I T = 95 C, 180 conduction half sine wave 20 T(AV) C Maximum RMS on-state current I 30 RMS A 10 ms sine pulse, rated V applied 250 Maximum peak, one-cycle RRM I TSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated V applied 310 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 442 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 4420 A s Maximum on-state voltage drop V 20 A, T = 25 C 1.3 V TM J On-state slope resistance r 12 m t T = 125 C J Threshold voltage V 1.0 V T(TO) T = 25 C 0.5 J Maximum reverse and direct leakage current I /I V = Rated V /V RM DM R RRM DRM T = 125 C 10 J mA Maximum holding current I Anode supply = 6 V, resistive load, initial I = 1 A 100 H T Maximum latching current I Anode supply = 6 V, resistive load 200 L Maximum rate of rise of off-state voltage dV/dt 500 V/s Maximum rate of rise of turned-on current dI/dt 150 A/s TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum peak gate power P 8.0 GM W Maximum average gate power P 2.0 G(AV) Maximum peak positive gate current + I 1.5 A GM Maximum peak negative gate voltage - V 10 V GM Anode supply = 6 V, resistive load, T = - 10 C 60 J Maximum required DC gate current to trigger I Anode supply = 6 V, resistive load, T = 25 C 45 mA GT J Anode supply = 6 V, resistive load, T = 125 C 20 J Anode supply = 6 V, resistive load, T = - 10 C 2.5 J Maximum required DC gate V Anode supply = 6 V, resistive load, T = 25 C 2.0 GT J voltage to trigger V Anode supply = 6 V, resistive load, T = 125 C 1.0 J Maximum DC gate voltage not to trigger V 0.25 GD T = 125 C, V = Rated value J DRM Maximum DC gate current not to trigger I 2.0 mA GD SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Typical turn-on time t T = 25 C 0.9 gt J Typical reverse recovery time t 4 s rr T = 125 C J Typical turn-off time t 110 q www.vishay.com For technical questions, contact: diodes-tech vishay.com Document Number: 94386 2 Revision: 06-Jun-08