6N138/6N139 Vishay Semiconductors High Speed Optocoupler, 100 kBd, Low Input Current, Photodiode Darlington Output FEATURES High current transfer ratio, 300 % Low input current, 0.5 mA NC 1 8 V CC High output current, 60 mA A 2 7 V B Isolation test voltage, 5300 V RMS C TTL compatible output, V = 0.1 V OL 3 6 V 0 High common mode rejection, 500 V/s NC GND 4 5 Adjustable bandwidth-access to base Standard molded dip plastic package i179082 Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC DESCRIPTION High common mode transient immunity and very high current APPLICATIONS ratio together with 5300 V insulation are achieved by RMS Logic ground isolation-TTL/TTL, TTL/CMOS, coupling and LED with an integrated high gain photo detector CMOS/CMOS, CMOS/TTL in an eight pin dual-in-line package. Separate pins for the EIA RS 232 line receiver photo diode and output stage enable TTL compatible Low input current line receiver-long lines, party lines saturation voltages with high speed operation. Photo darlington operation is achieved by tying the V and CC Telephone ring detector V terminals together. Access to the base terminal allows O 117 VAC line voltage status indication-low input power adjustment to the gain bandwidth. dissipation The 6N138 is ideal for TTL applications since the 300 % Low power systems-ground isolation minimum current transfer ratio with an LED current of 1.6 mA enables operation with one unit load-in and one unit load-out AGENCY APPROVALS with a 2.2 k pull-up resistor. The 6N139 is best suited for low power logic applications UL1577, file no. E52744 system code H or J, double involving CMOS and low power TTL. A 400 % current protection transfer ratio with only 0.5 mA of LED current is guaranteed DIN EN 60747-5-5 available with option 1 from 0 C to 70 C. Caution: Due to the small geometries of this device, it should be handled with Electrostatic Discharge (ESD) precautions. Proper grounding would prevent damage further and/or degradation which may be induced by ESD. ORDER INFORMATION PART REMARKS 6N138 CTR > 300 %, DIP-8 6N139 CTR > 500 %, DIP-8 6N138-X007 CTR > 300 %, SMD-8 (option 7) 6N138-X009 CTR > 300 %, SMD-8 (option 9) 6N139-X007 CTR > 500 %, SMD-8 (option 7) 6N139-X009 CTR > 500 %, SMD-8 (option 9) Note For additional information on the available options refer to option information. www.vishay.com For technical questions, contact: optocoupler.answers vishay.com Document Number: 83605 184 Rev. 1.5, 07-May-086N138/6N139 High Speed Optocoupler, 100 kBd, Vishay Semiconductors Low Input Current, Photodiode Darlington Output (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT INPUT Reverse voltage V 5.0 V R Forward current I 25 mA F Average input current I 20 mA f(avg) (2)(4) Input power dissipation P 35 mW diss OUTPUT Pin 8 to 5, pin 6 to 5 6N138 V , V - 0.5 to 7.0 V CC O Supply and output voltage Pin 8 to 5, pin 6 to 5 6N139 V , V - 0.5 to 18 V CC O Emitter base reverse voltage pin 5 to 7 0.5 V 50 % duty cycle - 1.0 ms Peak input current 40 mA pulse width Peak transient input current t 1.0 s, 300 pps 1.0 A p Output current Pin 6 I 60 mA O (3)(5) Output power dissipation P 100 mW diss COUPLER Isolation test voltage V 5300 V ISO RMS 12 V = 500 V, T = 25 C R 10 IO amb IO Isolation resistance 11 V = 500 V, T = 100 C R 10 IO amb IO Storage temperature T - 55 to + 125 C stg Operating temperature T - 55 to + 100 C amb (6) Lead soldering temperature t = 10 s T 260 C sld Notes (1) T = 25 C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. amb Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Derate linearly above 50 C free-air temperature at a rate of 0.4 mA/C. (3) Derate linearly above 50 C free-air temperature at a rate of 0.7 mW/C. (4) Derate linearly above 25 C free-air temperature at a rate of 0.7 mA/C. (5) Derate linearly above 25 C free-air temperature at a rate of 2.0 mW/C. (6) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). (1) ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Input forward voltage I = 1.6 mA V 1.4 1.7 V F F Input reverse breakdown voltage I = 10 A B 5.0 V R VR Temperature coefficient of forward I = 1.6 mA - 1.8 mV/C F voltage Document Number: 83605 For technical questions, contact: optocoupler.answers vishay.com www.vishay.com Rev. 1.5, 07-May-08 185