BAQ333, BAQ334, BAQ335 www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, Low Leakage Current FEATURES Silicon planar diodes Saving space Hermetic sealed parts Fits onto SOD-323/SOT-23 footprints Electrical data identical with the devices BAQ33 to BAQ35, BAQ133 to BAQ135 Very low reverse current Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESIGN SUPPORT TOOLS click logo to get started APPLICATIONS Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers Models Available MECHANICAL DATA Case: MicroMELF Weight: approx. 12 mg Cathode band color: black Packaging codes / options: TR3/10K per 13 reel (8 mm tape), 10K/box TR/2.5K per 7 reel (8 mm tape), 12.5K/box PARTS TABLE PART TYPE DIFFERENTIATION ORDERING CODE CIRCUIT CONFIGURATION REMARKS BAQ333 V = 40 V BAQ333-TR3 or BAQ333-TR Single Tape and reel RRM BAQ334 V = 70 V BAQ334-TR3 or BAQ334-TR Single Tape and reel RRM BAQ335 V = 140 V BAQ335-TR3 or BAQ335-TR Single Tape and reel RRM ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BAQ333 V 40 V RRM Repetitive peak reverse voltage BAQ334 V 70 V RRM BAQ335 V 140 V RRM BAQ333 V 30 V R Reverse voltage BAQ334 V 60 V R BAQ335 V 125 V R Peak forward surge current t = 1 s I 2A p FSM Forward continuous current I 200 mA F THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Mounted on epoxy-glass hard tissue, fig. 4 Thermal resistance junction to ambient air R 500 K/W thJA 2 35 m copper clad, 0.9 mm copper area per electrode Junction temperature T 175 C j Storage temperature range T -65 to +175 C stg Rev. 2.2, 11-Jul-17 Document Number: 85538 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BAQ333, BAQ334, BAQ335 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 100 mA V 1V F F E 300 lx, rated V I 13 nA R R E 300 lx, rated V , T = 125 C I 0.5 A R j R Reverse current E 300 lx, V = 15 V BAQ333 I 0.5 1 nA R R E 300 lx, V = 30 V BAQ334 I 0.5 1 nA R R E 300 lx, V = 60 V BAQ335 I 0.5 1 nA R R BAQ333 V 40 V (BR) I = 5 A, t /T = 0.01, R p Breakdown voltage BAQ334 V 70 V (BR) t = 0.3 ms p BAQ335 V 140 V (BR) Diode capacitance V = 0 V, f = 1 MHz C 3pF R D TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 10 000 0.71 1.3 1.27 V =V R RRM 0.152 1000 Scattering Limit 0.355 100 10 1 2.5 04 08 0 120 160 200 24 95 10329 94 9079 T - Junction Temperature (C) j Fig. 1 - Reverse Current vs. Junction Temperature Fig. 3 - Board for R Definition (in mm) thJA 1000 T =2 5 C j 100 Scattering Limit 10 1 0.1 0 0.4 0.8 1.2 1.6 2.0 94 9078 V - Forward Voltage (V) F Fig. 2 - Forward Current vs. Forward Voltage Rev. 2.2, 11-Jul-17 Document Number: 85538 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I- Reverse Current (nA) R I- Forward Current (mA) F 25 10 9.9