BAS16D-G www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES Silicon epitaxial planar diode Fast switching diode AEC-Q101 qualified available (part number on request) Base P/N-G3 - green, commercial grade Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 click logo to get started DESIGN SUPPORT TOOLS Models Available MECHANICAL DATA Case: SOD-123 Weight: approx. 9.4 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAS16D-G BAS16D-G3-08 or BAS16D-G3-18 Single AK Tape and reel ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 75 V R Repetitive peak reverse voltage V 100 V RRM Forward current (continuous) I 250 mA F t = 1 s I 2A FSM Non-repetitive peak forward current t = 1 ms I 1A FSM t = 1 s I 0.5 A FSM (1) Power dissipation P 350 mW tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 375 K/W thJA Maximum junction temperature T 150 C j (1) Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +150 C op Note (1) Valid provided electrodes are kept at ambient temperature Rev. 1.1, 22-Feb-18 Document Number: 85410 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BAS16D-G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 150 mA V 1.25 V F F I = 1 mA V 0.715 V F F Forward voltage I = 10 mA V 0.855 V F F I = 50 mA V 1V F F V = 75 V I 1000 nA R R Leakage current V = 25 V, T = 150 C I 30 A R j R V = 75 V, T = 150 C I 50 A R j R Diode capacitance V = 0 f = 1 MHz C 2pF R D I = 10 mA, I = 10 mA, F R Reverse recovery time t 6ns rr i = 1 mA, R = 100 R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb mW 3 10 500 2 T = 100 C 10 400 j P tot T = 25 C j 10 300 1 200 - 1 10 100 - 2 10 0 0 12 0 100 200 C 18105 V (V) 18186 T F amb Fig. 1 - Forward Characteristics Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 4 10 T = 25 C T = 25 C 5 j j 1.1 f = 1 kHz f = 1 MHz 2 3 10 1.0 5 2 2 0.9 10 5 2 0.8 10 5 0.7 2 -2 -1 2 082416 0 10 1011100 V (V) 17438 I (mA) 17440 R F Fig. 2 - Dynamic Forward Resistance vs. Forward Current Fig. 4 - Relative Capacitance vs. Reverse Voltage Rev. 1.1, 22-Feb-18 Document Number: 85410 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 R () I (mA) f F C (V ) D R C (0 V) D