X-On Electronics has gained recognition as a prominent supplier of BAS16-E3-18 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. BAS16-E3-18 Diodes - General Purpose, Power, Switching are a product manufactured by Vishay. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

BAS16-E3-18 Vishay

BAS16-E3-18 electronic component of Vishay
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See Product Specifications
Part No.BAS16-E3-18
Manufacturer: Vishay
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching 75 Volt 0.15 Amp 2.0A IFSM @ 1uS
Datasheet: BAS16-E3-18 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1683 ea
Line Total: USD 0.17 
Availability - 77605
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6596
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1903
10 : USD 0.1269
25 : USD 0.1256
100 : USD 0.0847
250 : USD 0.0839
500 : USD 0.0642
1000 : USD 0.0412
3000 : USD 0.0396
6000 : USD 0.0244

77605
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1683
10 : USD 0.1122
100 : USD 0.0575
1000 : USD 0.0435
2500 : USD 0.0337
10000 : USD 0.0266
20000 : USD 0.0224
50000 : USD 0.021
100000 : USD 0.0197

6596
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 382
Multiples : 1
382 : USD 0.0244

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Pd - Power Dissipation
Operating Temperature Range
Brand
Maximum Diode Capacitance
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BAS16-E3-18 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAS16-E3-18 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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BAS16 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES Silicon epitaxial planar diode 3 Ultra fast switching speed Surface mount package ideally suited for automatic insertion High conductance 12 AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: for definitions of compliance DESIGN SUPPORT TOOLS click logo to get started please see www.vishay.com/doc 99912 Models Available MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAS16-E3-08 or BAS16-E3-18 BAS16 Single A6 Tape and reel BAS16-HE3-08 or BAS16-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Non repetitive peak reverse voltage V 100 V RM Repetitive peak reverse voltage = working peak reverse voltage V = V = V 75 V RRM RWM R = DC blocking voltage t = 1 s I 1A p FSM Peak forward surge current t = 1 s I 2A p FSM Half wave rectification with resistive load and Average forward current f 50 MHz, on ceramic substrate I 150 mA F(AV) 8 mm x 10 mm x 0.7 mm On ceramic substrate Forward current I 300 mA F 8 mm x 10 mm x 0.7 mm On ceramic substrate Power dissipation P 350 mW tot 8 mm x 10 mm x 0.7 mm THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT On ceramic substrate Junction ambient R 357 K/W thJA 8 mm x 10 mm x 0.7 mm Junction and storage temperature range T = T -55 to +150 C j stg Operating temperature range T -55 to +150 C op Rev. 1.9, 11-Jul-17 Document Number: 85539 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BAS16 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 1 mA V 0.715 V F F I = 10 mA V 855 mV F F Forward voltage I = 50 mA V 1V F F I = 150 mA V 1.25 V F F V = 75 V I 1000 nA R R Reverse current V = 75 V, T = 150 C I 50 A R j R V = 25 V, T = 150 C I 30 A R j R Diode capacitance V = 0, f = 1 MHz C 4pF R D I = 10 mA to i = 1 mA, F R Reverse recovery time t 6ns rr V = 6 V, R = 100 R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 10000 V =20V R 100 1000 T = 100 C j 10 25 C 100 1 10 0.1 0.01 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 25 50 75 100 125 150 175 200 14356 V Forward Voltage (V) - 14357 T Junction Temperature (C) F j Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Reverse Current vs. Junction Temperature Rev. 1.9, 11-Jul-17 Document Number: 85539 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) F I Reverse Current (nA) R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
BC COMPONENTS
BC COMPONENTS (VISHAY)
BCC
BEYSCHLAG
DALE
DALE (VISHAY)
DLE
DRALORIC / VISHAY
General Semi
GENERAL SEMI.
GENERAL SEMICONDUCTOR (VISHAY)
GS
HUNTINGTON ELECTRIC
Micro-Measurements (Division of Vishay Precision Group)
ROEDERSTEIN
ROEDERSTEIN / VISHAY
SFERNICE (VISHAY)
SFR
SILICONIX
SILICONIX (VISHAY)
SIX
SPD
SPECTROL
SPECTROL ELECTRONICS
SPP
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TECHNO
VIR
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Vishay Dale
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Vishay Polytech
Vishay Roederstein
Vishay Sfernice
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Vishay Spectrol
Vishay Sprague
Vishay Tansitor
Vishay Techno
Vishay Thin Film
Vishay Vitramon
Vishay / BC Components
Vishay / Beyschlag
Vishay / Cera-Mite
Vishay / Dale
Vishay / Draloric
Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
Vishay / Mills
Vishay / Milwaukee
Vishay / Polytech
Vishay / Roederstein
Vishay / Sfernice
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Vishay / Sprague
Vishay / Tansitor
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Vishay / Thin Film
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Vishay BC Components
Vishay Beyschlag
Vishay Beyschlag/Draloric/BC Components
VISHAY CERA-MITE
Vishay Dale
VISHAY DRALORIC
VISHAY ELECTRO-FILMS
VISHAY FOIL RESISTORS
Vishay Foil Resistors (Division of Vishay Precision Group)
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Vishay General Semiconductor
Vishay Huntington Electric Inc.
Vishay Intertech
Vishay Micro-Measurements
VISHAY OPTO
Vishay Precision
Vishay Precision Group
Vishay Precision Group Foil Resistors
VISHAY ROEDERSTEIN
VISHAY SEMICONDUCTOR
Vishay Semiconductor Diodes Division
Vishay Semiconductor Opto Division
Vishay Semiconductors
Vishay Sfernice
Vishay Siliconix
VISHAY SMALL SIGNAL
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Vishay Spectrol
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Vishay Thin Film
Vishay Vitramon
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VISHAY/SILICONIX
VishayBC Components
VishayBeyschlag
VishayElectro-Films
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VSC
VSO
VSS
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