BAQ33, BAQ34, BAQ35 www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, Low Leakage Current FEATURES Silicon planar diodes Very low reverse current Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: MiniMELF (SOD-80) Weight: approx. 31 mg Cathode band color: black Packaging codes / options: GS18/10K per 13 reel (8 mm tape), 10K/box GS18/10K per 13 reel (8 mm tape), 10K/box PARTS TABLE TYPE PART TYPE DIFFERENTIATION ORDERING CODE CIRCUIT CONFIGURATION REMARKS MARKING BAQ33 V = 40 V BAQ33-GS18 or BAQ33-GS08 - Single Tape and reel RRM BAQ34 V = 70 V BAQ34-GS18 or BAQ34-GS08 - Single Tape and reel RRM BAQ35 V = 140 V BAQ35-GS18 or BAQ35-GS08 - Single Tape and reel RRM ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BAQ33 V 40 V RRM Repetitive peak reverse voltage BAQ34 V 70 V RRM BAQ35 V 140 V RRM BAQ33 V 30 V R Reverse voltage BAQ34 V 60 V R BAQ35 V 125 V R Peak forward surge current t = 1 s I 2A p FSM Forward continuous current I 200 mA F THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT On PC board Thermal resistance junction to ambient air R 500 K/W thJA 50 mm x 50 mm x 1.6 mm Junction temperature T 175 C j Storage temperature range T -65 to +175 C stg Rev. 1.9, 11-Jul-17 Document Number: 85537 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BAQ33, BAQ34, BAQ35 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 100 mA V 1V F F E 300 Ix, rated V I 13 nA R R E 300 Ix, rated V , Tj = 125 C I 0.5 A R R Reverse current E 300 Ix, V = 15 V BAQ33 I 0.5 1 nA R R E 300 Ix, V = 30 V BAQ34 I 0.5 1 nA R R E 300 Ix, V = 60 V BAQ35 I 0.5 1 nA R R I = 5 A, t /T = 0.01, R p BAQ33 V 40 V (BR) t = 0.3 ms p Breakdown voltage BAQ34 V 70 V (BR) I = 5 A, t /T = 0.01, R p t = 0.3 ms p BAQ35 V 140 V (BR) Diode capacitance V = 0 V, f = 1 MHz C 3pF R D TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 10 000 1000 V =V R RRM T =2 5 C j 1000 100 Scattering Limit Scattering Limit 100 10 10 1 1 0.1 0 0.4 0.8 1.2 1.6 04 08 0 120 160 200 2.0 94 9079 T - Junction Temperature (C) 94 9078 V - Forward Voltage (V) j F Fig. 1 - Reverse Current vs. Junction Temperature Fig. 2 - Forward Current vs. Forward Voltage Rev. 1.9, 11-Jul-17 Document Number: 85537 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I- Reverse Current (nA) R I- Forward Current (mA) F