BAS385 Vishay Semiconductors Small Signal Schottky Diode Features Integrated protection ring against static discharge Very low forward voltage AEC-Q101 qualified Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 9612315 Halogen-free according to IEC 61249-2-21 definition Applications Mechanical Data Applications where a very low forward voltage is Case: MicroMELF required Weight: approx. 12 mg Cathode band color: black Packaging codes/options: TR3/10 k per 13 reel (8 mm tape), 10 k/box TR/2.5 k per 7 reel (8 mm tape), 12.5 k/box Parts Table Part Type differentiation Ordering code Remarks V = 30 V BAS385 BAS385-TR3 or BAS385-TR Tape and Reel R Absolute Maximum Ratings T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Value Unit V Reverse voltage 30 V R t = 10 ms I Peak forward surge current 5A p FSM t 1 s I Repetitive peak forward current 300 mA p FRM I Forward continuous current 200 mA F Average forward current V = 25 V I 200 mA RWM FAV Thermal Characteristics T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Value Unit on PC board R Junction to ambient air 320 K/W thJA 50 mm x 50 mm x 1.6 mm T Junction temperature 125 C j Storage temperature range T - 65 to + 150 C stg Document Number 85504 www.vishay.com For technical questions within your region, please contact one of the following: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com Rev. 2.0, 09-Jun-10 1BAS385 Vishay Semiconductors Electrical Characteristics T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Min. Typ. Max. Unit I = 0.1 mA V 240 mV F F I = 1 mA V 320 mV F F Forward voltage I = 10 mA V 400 mV F F I = 30 mA V 500 mV F F I = 100 mA V 800 mV F F V = 25 V, t = 300 s I Reverse current 2.3 A R p R V = 1 V, f = 1 MHz C Diode capacitance 10 pF R D Typical Characteristics T = 25 C, unless otherwise specified amb 200 1000 V = 30 V 180 R T = 125 C j 160 100 140 R = 540 kW thJA 120 T = 25 C j P - Limit R at 100 % V 10 100 R 80 P - Limit 60 R at 80 % V 1 R 40 20 0 0.1 25 50 75 100 125 150 0 0.5 1.0 1.5 15822 V - Forward Voltage (V) T - Junction Temperature (C) 15824 j F Figure 1. Max. Reverse Power Dissipation vs. Junction Figure 3. Forward Current vs. Forward Voltage Temperature 1000 10 f = 1 MHz 9 V = V R RRM 8 7 100 6 5 4 10 3 2 1 0 1 25 50 75 100 125 150 0.1 1 10 100 15825 V - Reverse Voltage (V) 15823 T - Junction Temperature (C) R j Figure 2. Reverse Current vs. Junction Temperature Figure 4. Diode Capacitance vs. Reverse Voltage www.vishay.com Document Number 85504 For technical questions within your region, please contact one of the following: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com 2 Rev. 2.0, 09-Jun-10 I - Reverse Current (A) P - Reverse Power Dissipation (mW) R R I - Forward Current (mA) F C - Diode Capacitance (pF) D