BAT46W-G www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES For general purpose applications This diode features very low turn-on voltage and fast switching This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges AEC-Q101 qualified available (part number on request) click logo to get started DESIGN SUPPORT TOOLS Base P/N-G3 - green commercial grade Material categorization: for definitions of compliance Models Available please see www.vishay.com/doc 99912 MECHANICAL DATA Case: SOD-123 Weight: approx. 9.4 mg Packaging codes/options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAT46W-G BAT46W-G3-08 or BAT46W-G3-18 Single LH Tape and reel ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V 100 V RRM (1) Forward continuous current I 150 mA F (1) Repetitive peak forward current t < 1 s, < 0.5 I 350 mA p FRM (1) Surge forward current t < 10 ms I 750 mA p FSM (1) Power dissipation T = 65 C P 150 mW amb tot Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 300 K/W thJA Junction temperature T 125 C j Operating temperature range T -55 to +125 C op Storage temperature range T -55 to +150 C stg Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 1.1, 22-Feb-18 Document Number: 85159 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BAT46W-G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reverse breakdown voltage I = 100 A (pulsed) V 100 V R (BR) V = 1.5 V I 0.5 A R R V = 1.5 V, T = 60 C I 5A R j R V = 10 V I 0.8 A R R V = 10 V, T = 60 C I 7.5 A R j R (1) Leakage current V = 50 V I 2A R R V = 50 V, T = 60 C I 15 A R j R V = 75 V I 5A R R V = 75 V, T = 60 C I 20 A R j R I = 0.1 mA V 250 mV F F (1) Forward voltage I = 10 mA V 450 mV F F I = 250 mA V 1000 mV F F V = 0 V, f = 1 MHz C 10 pF R D Diode capacitance V = 1 V, f = 1 MHz C 6pF R D Note (1) Pulse test t 300 s, < 2 % p TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 250 T = 60 C j 100 200 150 10 25 C 100 1 50 0.1 0 0.01 0 50 100 150 200 0 0.2 0.4 0.6 0.8 1 1.2 18548 18546 V - Forward Voltage (V) T - Ambient Temperature (C) amb F Fig. 1 - Typical Instantaneous Forward Characteristics Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 100 10 T = 60 C j 1 T = 25 C j 0.1 0.01 020 40 60 80 100 18547 V - Reverse Voltage (V) R Fig. 2 - Typical Reverse Characteristics Rev. 1.1, 22-Feb-18 Document Number: 85159 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I- Reverse Leakage Current (A) R I- Forward Current (mA) F P - Power Dissipation (mW) tot