BAT81S, BAT82S, BAT83S
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Vishay Semiconductors
Small Signal Schottky Diode
FEATURES
Integrated protection ring against static
discharge
Low capacitance
Low leakage current
Low forward voltage drop
Very low switching time
AEC-Q101 qualified
Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
MECHANICAL DATA
General purpose and switching Schottky barrier diode
Case: DO-35
HF-detector
Weight: approx. 125 mg
Protection circuit
Cathode band color: black
Diode for low currents with a low supply voltage
Packaging codes/options:
Small battery charger
TR/10K per 13" reel (52 mm tape), 50K/box
Power supplies
TAP/10K per ammopack (52 mm tape), 50K/box
DC/DC converter for notebooks
PARTS TABLE
TYPE INTERNAL
PART ORDERING CODE TYPE MARKING REMARKS
DIFFERENTATION CONSTRUCTION
BAT81S V = 40 V BAT81S-TR or BAT81S-TAP Single diode BAT81S Tape and reel/ammopack
R
BAT82S V = 50 V BAT82S-TR or BAT82S-TAP Single diode BAT82S Tape and reel/ammopack
R
BAT83S V = 60 V BAT83S-TR or BAT83S-TAP Single diode BAT83S Tape and reel/ammopack
R
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
BAT81S V 40 V
R
Reverse voltage BAT82S V 50 V
R
BAT83S V 60 V
R
Forward continuous current I 30 mA
F
Peak forward surge current t 10 ms I 500 mA
p FSM
Repetitive peak forward current t 1 s I 150 mA
p FRM
THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air I = 4 mm, T = constant R 320 K/W
L thJA
Junction temperature T 125 C
j
Storage temperature range T - 65 to + 150 C
stg
ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
I = 0.1 mA V 330 mV
F F
Forward voltage I = 1 mA V 410 mV
F F
I = 15 mA V 1000 mV
F F
Reverse current V = V I 200 nA
R Rmax. R
Diode capacitance V = 1 V, f = 1 MHz C 1.6 pF
R D
Rev. 1.9, 06-May-13 Document Number: 85512
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000BAT81S, BAT82S, BAT83S
www.vishay.com
Vishay Semiconductors
TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
14 1000
V = 60 V
R
12
100
R = 540 K/W
thJA
T = 125 C
10
j
10
8
T = 25 C
j
6
1
PP - Limit at 100 % - Limit at 100 %VV
R R
R R
4
P - Limit at 80 % V
0.1
R R
2
0 0.01
0 0.5 1 1.5 2.0
25 50 75 100 125 150
15794
T - Junction Temperature (C)
15796 V - Forward Voltage (V)
j F
Fig. 1 - Max. Reverse Power Dissipation vs. Fig. 3 - Forward Current vs. Forward Voltage
Junction Temperature
1000 2.0
V = V
f = 1 MHz
R RRM 1.8
1.6
100
1.4
1.2
10 1.0
0.8
0.6
1
0.4
0.2
0.1 0
0.1 1 10 100
25 50 75 100 125 150
15797 V - Reverse Voltage (V)
15795 T - Junction Temperature (C)
j R
Fig. 2 - Reverse Current vs. Junction Temperature Fig. 4 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): DO-35
Cathode Identicfi ation
26 min. [1.024] 3.9 max. [0.154] 26 min. [1.024]
3.1 min. [0.120]
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
94 9366
Rev. 1.9, 06-May-13 Document Number: 85512
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
I - Reverse Current (A)
P - Reverse Power Dissipation (mW)
R
R
0.6 max. [0.024]
0.4 min. [0.015]
C - Diode Capacitance (pF)
I- Forward Current (mA)
D
F
1.7 [0.067]
1.3 [0.050]