BAT85S www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES Integrated protection ring against static discharge Very low forward voltage AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS Applications where a very low forward voltage is required DESIGN SUPPORT TOOLS click logo to get started MECHANICAL DATA Case: DO-35 (DO-204AH) Models Available Weight: approx. 125 mg Cathode band color: black Packaging codes/options: TR/10K per 13 reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAT85S BAT85S-TR or BAT85S-TAP Single BAT85S Tape and reel/ammopack ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 30 V R Peak forward surge current t 10 ms I 5A p FSM Repetitive peak forward current t < 1 s I 300 mA p FRM Forward continuous current I 200 mA F PCB mounting, I = 4 mm Average forward current I 200 mA FAV V = 25 V, T = 50 C RWM amb THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air I = 4 mm, T = constant R 350 K/W L thJA Junction temperature T 125 C j Storage temperature range T -65 to +150 C stg ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 0.1 mA V 240 mV F F I = 1 mA V 320 mV F F Forward voltage I = 10 mA V 400 mV F F I = 30 mA V 500 mV F F I = 100 mA V 800 mV F F Reserve current V = 25 V I 2A R R Diode capacitance V = 1 V, f = 1 MHz C 10 pF R D Reserve recovery time I = 10 mA to I = 10 mA to i = 1 mA t 5ns F R R rr Rev. 1.9, 02-Jun-17 Document Number: 85513 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BAT85S www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 200 1000 V = 30 V 180 R T = 125 C j 160 100 140 R = 540 kW thJA 120 T = 25 C j P - Limit R at 100 % V 10 100 R 80 P - Limit 60 R 1 at 80 % V R 40 20 0 0.1 25 50 75 100 125 150 0 0.5 1.0 1.5 15822 V - Forward Voltage (V) T - Junction Temperature (C) 15824 j F Fig. 1 - Maximum Reverse Power Dissipation vs. Fig. 3 - Forward Current vs. Forward Voltage Junction Temperature 1000 10 f = 1 MHz 9 V = V R RRM 8 7 100 6 5 4 10 3 2 1 1 0 25 50 75 100 125 150 0.1 1 10 100 15825 V - Reverse Voltage (V) 15823 T - Junction Temperature (C) R j Fig. 2 - Reverse Current vs. Junction Temperature Fig. 4 - Diode Capacitance vs. Reverse Voltage PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH) Cathode Identicfi ation 26 min. 1.024 3.9 max. 0.154 26 min. 1.024 3.1 min. 0.120 Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 Rev. 1.9, 02-Jun-17 Document Number: 85513 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Current (A) P - Reverse Power Dissipation (mW) R R 0.6 max. 0.024 0.4 min. 0.015 I - Forward Current (mA) F C - Diode Capacitance (pF) D 1.7 0.067 1.3 0.050