BYV27-600 www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES Glass passivated junction Hermetically sealed axial-leaded glass envelope Low reverse current Ultra fast soft recovery switching Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 949539 APPLICATIONS MECHANICAL DATA Electronic ballast Case: SOD-57 SMPS Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYV27-600 BYV27-600-TR 5000 per 10 tape and reel 25 000 BYV27-600 BYV27-600-TAP 5000 per ammopack 25 000 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYV27-600 V = 600 V I = 2 A SOD-57 R F(AV) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT Reverse voltage = repetitive peak reverse See electrical characteristics BYV27-600 V = V 600 V R RRM voltage Peak forward surge current t = 10 ms, half sine wave I 50 A p FSM Average forward current T = 50 C, I = 10 mm I 2A amb F(AV) Non repetitive reverse avalanche energy Inductive load, I = 400 mA E 10 mJ (BR)R R Junction and storage temperature range T = T - 55 to + 175 C j stg MAXIMUM THERMAL RESISTANCE (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, T = constant R 45 K/W L thJA Junction ambient On PC board with spacing 25 mm R 100 K/W thJA Rev. 1.7, 04-Sep-12 Document Number: 86041 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BYV27-600 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT I = 1 A V - - 1.15 V F F I = 3 A V - - 1.35 V F F Forward voltage I = 1 A, T = 175 C V - - 0.85 V F j F I = 3 A, T = 175 C V - - 1.15 V F j F V = V I -- 5 A R RRM R Reverse current V = V , T = 150 C I - - 150 A R RRM j R Reverse breakdown voltage I = 100 A BYV27-600 V 600 - - V R (BR)R Reverse recovery time I = 0.5 A, I = 1 A, i = 0.25 A t - - 40 ns F R R rr Forward recovery I = 1 A V -3.4 - V F FP Forward recovery time I = 1 A t -250 - ns F fr TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 350 2.2 V = V V = V R RRM R RRM 2.0 half sine wave 300 1.8 R = thJA 1.6 250 45 K/W R 45 K/W thJA P - Limit 1.4 l = 10 mm R at 100 % V 200 100 K/W R 1.2 1.0 160 K/W 150 0.8 R 100 K/W 100 thJA 0.6 P - Limit R PCB: d = 25 mm at 80 % V R 0.4 50 0.2 0.0 0 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160 180 14360 14359 T - Junction Temperature (C) T - Ambient Temperature (C) j amb Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 10001000 100 V = V R RRM 10 T = 175 C j 100100 1 T = 25 C j 0.1 1010 0.01 11 0.001 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 2525 5050 7575 100100 112525 150150 117575 14358 V - Forward Voltage (V) 14361 T - Junction Temperature (C) F j Fig. 2 - Max. Reverse Current vs. Junction Temperature Fig. 4 - Max. Forward Current vs. Forward Voltage Rev. 1.7, 04-Sep-12 Document Number: 86041 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Current (A) P - Reverse Power Dissipation (mW) R R I - Forward Current (A) F I - Average Forward Current (A) FAV