X-On Electronics has gained recognition as a prominent supplier of H11B2 Transistor Output Optocouplers across the USA, India, Europe, Australia, and various other global locations. H11B2 Transistor Output Optocouplers are a product manufactured by Vishay. We provide cost-effective solutions for Transistor Output Optocouplers, ensuring timely deliveries around the world.

H11B2 Vishay

H11B2 electronic component of Vishay
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See Product Specifications
Part No.H11B2
Manufacturer: Vishay
Category: Transistor Output Optocouplers
Description: Transistor Output Optocouplers Photodarlington Out
Datasheet: H11B2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.4613
10 : USD 1.1857
25 : USD 0.9119
100 : USD 0.8207
250 : USD 0.7295
N/A

Obsolete
0
MOQ : 1000
Multiples : 1000
1000 : USD 3.471
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Output Type
Package / Case
Number of Channels
If - Forward Current
Maximum Collector Current
Maximum Collector Emitter Voltage
Isolation Voltage
Maximum Collector Emitter Saturation Voltage
Vf - Forward Voltage
Vr - Reverse Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Mounting Style
Input Type
Output Device
Brand
Number Of Channels Per Chip
Factory Pack Quantity :
Height
Length
Width
Collector-Emitter Breakdown Voltage
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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We are delighted to provide the H11B2 from our Transistor Output Optocouplers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the H11B2 and other electronic components in the Transistor Output Optocouplers category and beyond.

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End of Life January-2018 - Alternative Device: CNY17 H11B1, H11B2, H11B3 www.vishay.com Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, With Base Connection FEATURES 1 6 A B Isolation test voltage: 4420 V RMS Coupling capacitance, 0.5 pF C 5 C 2 Material categorization: 3 4 for definitions of compliance please see NC E www.vishay.com/doc 99912 i179005 AGENCY APPROVALS UL1577, file no. E52744 DESCRIPTION cUL tested to CSA 22.2 bulletin 5A The H11B1, H11B2, H11B3 are industry standard optocouplers, consisting of a gallium arsenide infrared LED DIN EN 60747-5-5 (VDE 0884-5) available with option 1 and a silicon photodarlington. FIMKO EN60065, EN60950-1 CQC: GB8898-2011, GB4943.1-2011 ORDERING INFORMATION DIP H 1 1 B - X 00 PART NUMBER PACKAGE OPTION 7.62 mm Option 7 Option 9 > 0.1 mm > 0.7 mm AGENCY CERTIFIED/PACKAGE CTR (%) UL, FIMKO, CQC > 500 > 200 > 100 DIP-6 H11B1 H11B2 H11B3 (1) SMD-6, option 7 H11B1-X007T -- (1) SMD-6, option 9 H11B1-X009 H11B2-X009T - UL, FIMKO, CQC, VDE > 500 > 200 > 100 SMD-6, option 7 H11B1-X017 - - Notes Additional options may be possible, please contact sales office. (1) Also available in tubes, no T in the end. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 3V R Forward continuous current I 60 mA F Power dissipation P 100 mW diss Derate linearly from 25 C 1.33 mW/C OUTPUT Collector emitter breakdown voltage BV 25 V CEO Emitter collector breakdown voltage BV 7V ECO Collector base breakdown voltage BV 30 V CBO Collector current (continuous) I 100 mA C Power dissipation P 150 mW diss Derate linearly from 25 C 2mW/C Rev. 1.8, 23-Jul-15 Document Number: 83609 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000End of Life January-2018 - Alternative Device: CNY17 H11B1, H11B2, H11B3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT COUPLER Total package dissipation (LED plus detector) P 260 mW tot Derate linearly from 25 C 3.5 mW/C Storage temperature T -55 to +150 C stg Operating temperature T -55 to +100 C amb Lead soldering time at 260 C 10 s Note Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT H11B1 V -1.1 1.5 V F I = 50 mA F Forward voltage H11B2 V -1.1 1.5 V F I = 10 mA H11B3 V -1.1 1.5 V F F Reverse current V = 3 V I - - 10 A R R Junction capacitance V = 0 V, f = 1 MHz C -50 - pF F j OUTPUT Collector emitter breakdown voltage I = 1 mA, I = 0 mA BV 30 - - V C F CEO Emitter collector breakdown voltage I = 100A, I = 0 mA BV 7- - V E F ECO Collector base breakdown voltage I = 100 A, I = 0 mA BV 30 - - V C F CBO Collector emitter leakage current V = 10 V, I = 0 mA I - - 100 nA CE F CEO COUPLER Saturation voltage collector-emitter I = 1 mA, I = 1 mA V -- 1 V F C CEsat Capacitance (input to output) C -0.5 - pF IO Note Minimum and maximum values were tested requirements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements CURRENT TRANSFER RATIO (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT H11B1 CTR 500 % DC DC current transfer ratio V = 5 V, I = 1 mA H11B2 CTR 200 % CE F DC H11B3 CTR 100 % DC SWITCHING CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT t 5s on = 5 mA, V = 10 V, R = 100 Switching times I F CE L t 30 s off Rev. 1.8, 23-Jul-15 Document Number: 83609 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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