VS-HFA30PB120-N3
www.vishay.com
Vishay Semiconductors
HEXFRED
Ultrafast Soft Recovery Diode, 30 A
FEATURES
Ultrafast and ultrasoft recovery
Very low I and Q
RRM rr
1
Designed and qualified according to
JEDEC -JESD 47
33
Material categorization:
TO-247AC 2L
for definitions of compliance please see
Base
www.vishay.com/doc?99912
cathode
BENEFITS
2
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
13
Cathode Anode
DESCRIPTION
VS-HFA30PB120... is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
PRIMARY CHARACTERISTICS
features a superb combination of characteristics which
I 30 A
result in performance which is unsurpassed by any rectifier
F(AV)
previously available. With basic ratings of 1200 V and 30 A
V 1200 V
R
continuous current, the VS-HFA30PB120... is especially well
V at I 2.3 V
F F
suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultrafast recovery time, the
t typ. 47 ns
rr
HEXFRED product line features extremely low values of
T max. 150 C
J
peak recovery current (I ) and does not exhibit any
RRM
Package TO-247AC 2L tendency to snap-off during the t portion of recovery. The
b
HEXFRED features combine to offer designers a rectifier
Circuit configuration Single
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA30PB120... is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS
Cathode to anode voltage V 1200 V
R
Maximum continuous forward current I T = 100 C 30
F C
Single pulse forward current I t = 10 ms 120 A
FSM p
Maximum repetitive forward current I 90
FRM
T = 25 C 350
C
Maximum power dissipation P W
D
T = 100 C 140
C
Operating junction and storage temperature range T , T -55 to +150 C
J Stg
Revision: 29-Nov-2019 Document Number: 94069
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA30PB120-N3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified)
J
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
V I = 100 A 1200 - -
BR R
breakdown voltage
I = 30 A -2.4 4.1
F
V
Maximum forward voltage V I = 60 A See fig. 1 - 3.1 5.7
FM F
I = 30 A, T = 125 C - 2.3 4.0
F J
V = V rated -1.3 40
R R
Maximum reverse
I See fig. 2 A
RM
leakage current
T = 125 C, V = 0.8 x V rated - 1100 4000
J R R
Junction capacitance C V = 200 V See fig. 3 - 50 75 pF
T R
Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH
S
DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified)
J
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
t I = 1.0 A, dI /dt = 200 A/s, V = 30 V - 47 -
rr F F R
Reverse recovery time
t T = 25 C - 110 170 ns
rr1 J
See fig. 5, 10
t T = 125 C - 170 260
rr2 J
I T = 25 C - 10 15
RRM1 J
Peak recovery current
A
See fig. 6
I T = 125 C I = 30 A - 16 24
RRM2 J F
dI /dt = 200 A/s
F
Q T = 25 C - 650 980
Reverse recovery charge rr1 J
nC
V = 200 V
R
See fig. 7
Q T = 125 C - 1540 2310
rr2 J
Peak rate of fall of recovery
dI /dt1 T = 25 C - 270 -
(rec)M J
current during t A/s
b
dI /dt2 T = 125 C - 240 -
See fig. 8 (rec)M J
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T 0.063" from case (1.6 mm) for 10 s - - 300 C
lead
Thermal resistance,
R --0.36
thJC
junction to case
Thermal resistance,
R Typical socket mount - - 40 C/W
thJA
junction to ambient
Thermal resistance,
R Mounting surface, flat, smooth, and greased - 0.50 -
thCS
case to heatsink
- 5.61 - g
Weight
- 0.198 - oz.
6.0 12 kgf cm
Mounting torque -
(5.0) (10) (lbf in)
Marking device Case style TO-247AC 2L HFA30PB120
Revision: 29-Nov-2019 Document Number: 94069
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000