IMBD4448 www.vishay.com Vishay Semiconductors Small Signal Switching Diode FEATURES Silicon epitaxial planar diode 3 Fast switching diode in case SOT-23, especially suited for automatic insertion. AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial grade 12 Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS IMBD4448-E3-08 or IMBD4448-E3-18 IMBD4448 Single A3 Tape and reel IMBD4448-HE3-08 or IMBD4448-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 75 V R Peak reverse voltage V 100 V RM Rectified current (average) half wave f 50 Hz I 150 mA F(AV) (1) rectification with resistive load Surge forward current t < 1 s and T = 25 C I 500 mA J FSM (1) Power dissipation P 350 mW tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 450 K/W thJA Junction temperature T 150 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +150 C op Note (1) Device on fiberglass substrate, see layout on next page Rev. 1.8, 13-Feb-18 Document Number: 85732 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IMBD4448 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 5 mA V 0.62 0.72 V F F Forward voltage I = 100 mA V 1V F F V = 70 V I 2500 nA R R Leakage current V = 70 V, T = 150 C I 50 A R j R V = 25 V, T = 150 C I 30 A R j R Diode capacitance V = V = 0 V C 4pF F R D I = 10 mA to i = 1 mA, F R Reverse recovery time t 4ns rr V = 6 V, R = 100 R L LAYOUT FOR R TEST thJA Thickness: Fiberglass 1.5 mm (0.059 in.) Copper leads 0.3 mm (0.012 in.) 7.5 (0.3) 3 (0.12) 1 (0.4) 2 (0.8) 1 (0.4) 12 (0.47) 2 (0.8) 0.8 (0.03) 15 (0.59) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 10000 T =25C j f=1kHz T = 100C 100 j 1000 10 25 C 100 1 10 0.1 0.01 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.01 0.1 110 100 18689 V - Forward Voltage ( V ) I - Forward Current (mA) 18662 F F Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Dynamic Forward Resistance vs. Forward Current Rev. 1.8, 13-Feb-18 Document Number: 85732 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current ( mA) F r - Dynamic Forward Resistance() f