MCL4148-TR3 Vishay

333 3 MCL4148, MCL4448 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diodes FEATURES Silicon epitaxial planar diode Saving space Hermetic sealed parts Fits onto SOD-323 / SOT-23 footprints Electrical data identical with the devices 1N4148 and 1N4448 respectively MicroMELF package Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 ADDITIONAL RESOURCES APPLICATIONS Extreme fast switches 3D Models MECHANICAL DATA Case: MicroMELF Weight: approx. 12 mg Cathode band color: black Packaging codes / options: TR3/10K per 13 reel (8 mm tape), 10K/box TR/2.5K per 7 reel (8 mm tape), 12.5K/box PARTS TABLE PART TYPE DIFFERENTIATION ORDERING CODE CIRCUIT CONFIGURATION REMARKS MCL4148 V = 100 V, V at I 50 mA = 1 V MCL4148-TR3 or MCL4148-TR Single Tape and reel RRM F F MCL4448 V = 100 V, V at I 100 mA = 1 V MCL4448-TR3 or MCL4448-TR Single Tape and reel RRM F F ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 75 V R Repetitive peak reverse voltage V 100 V RRM Peak forward surge current t = 1 s I 2A p FSM Repetitive peak forward current I 450 mA FRM Forward continuous current I 200 mA F Average forward current V = 0 V I 150 mA R F(AV) Power dissipation P 500 mW tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Mounted on epoxy-glass hard tissue, Fig. 5, Thermal resistance junction to ambient air R 500 K/W 2 thJA 35 m copper clad, 0.9 mm copper area per electrode Junction temperature T 175 C j Storage temperature range T -65 to +175 C stg Rev. 2.3, 25-Feb-2020 Document Number: 85566 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D MCL4148, MCL4448 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL SYMBOL MIN. TYP. MAX. UNIT I = 5 mA MCL4448 V 0.620 0.720 V F F Forward voltage I = 50 mA MCL4148 V 0.860 1 V F F I = 100 mA MCL4448 V 0.930 1 V F F V = 20 V I 25 nA R R Reverse current V = 20 V, T = 150 C I 50 A R j R V = 75 V I 5A R R I = 100 A, t /T = 0.01, R p Breakdown voltage V 100 V (BR) t = 0.3 ms p V = 0 V, f = 1 MHz, R Diode capacitance C 4pF D V = 50 mV HF Rectification efficiency V = 2 V, f = 100 MHz 45 % HF r I = I = 10 mA, F R t 8 rr i = 1 mA R Reverse recovery time ns I = 10 mA, V = 6 V, F R t 4 rr i = 0.1 x I , R = 100 R R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1000 MCL 4148 T = 25 C 100 j 100 Scattering Limit 10 Scattering Limit 10 1 T = 25 C j 1 0.1 2.0 1 100 10 0 0.4 0.8 1.2 1.6 94 9098 V - Reverse Voltage (V) 16641 V - Forward Voltage (V) R F Fig. 1 - Reverse Current vs. Junction Temperature Fig. 3 - Reverse Current vs. Reverse Voltage 3.0 1000 MCL 4448 f = 1 MHz 2.5 T = 25 C j 100 2.0 Scattering Limit 10 1.5 1.0 1 0.5 T =25C j 0 0.1 0.1 1 10 100 0 0.4 0.8 1.2 1.6 2.0 94 9099 16643 V - Forward Voltage (V) V - Reverse Voltage (V) F R Fig. 2 - Forward Current vs. Forward Voltage Fig. 4 - Diode Capacitance vs. Reverse Voltage Rev. 2.3, 25-Feb-2020 Document Number: 85566 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) I - Forward Current (mA) F F C - Diode Capacitance (pF) I - Reverse Current (nA) D R