333 3 MOC8101, MOC8102, MOC8103, MOC8104 www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, no Base Connection FEATURES 1 6 A B Isolation test voltage, 5300 V RMS No base terminal connection for improved C 5 C 2 common mode interface immunity Long term stability 4 NC 3 E Industry standard dual in line package Material categorization: for definitions of compliance please se e i179009-1 www.vishay.com/doc 99912 AGENCY APPROVALS LINKS TO ADDITIONAL RESOURCES UL cUL 3D Models Design Tools Related Models Footprints Documents DIN EN 60747-5-5 (VDE 0884) available with option 1 BSI EN 62368-1 CQC GB4943.1-2011 Schematics CQC GB8898-2011 CSA DESCRIPTION The MOC8101, MOC8102, MOC8103, MOC8104 family optocoupler consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in DIP-6 package. The coupling device is suitable for signal transmission between two electrically separated circuits. The potential difference between the circuits to be coupled should not exceed the maximum permissible reference voltages. The base terminal of the MOC8101, MOC8102, MOC8103, MOC8104 is not connected, resulting in a substantially improved common mode interference immunity. ORDERING INFORMATION DIP- Option 6 MO C 8 1 0 - X 0 T PART NUMBER CTR PACKAGE OPTION TAPE 10.16 mm 7.62 mm BIN AND Option 7 Option 9 REEL > 0.7 mm > 0.1 mm CTR (%) AGENCY CERTIFIED / PACKAGE 10 mA UL, CSA, BSI 50 to 80 73 to 117 108 to 173 160 to 256 DIP-6 MOC8101 MOC8102 MOC8103 MOC8104 DIP-6, 400 mil, option 6 - MOC8102-X006 - - SMD-6, option 9 - MOC8102-X009 - - VDE, UL, CSA, BSI 50 to 80 73 to 117 108 to 173 160 to 256 DIP-6 - - MOC8103-X001 - DIP-6, 400 mil - MOC8102-X016 - MOC8104-X016 (1) SMD-6, option 7 MOC8101-X017T MOC8102-X017T -- SMD-6, option 9 - - - MOC8104-X019T Notes Additional options may be possible, please contact sales office (1) Also available in tubes do not put T on end Rev. 1.7, 04-Nov-2020 Document Number: 83660 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D MOC8101, MOC8102, MOC8103, MOC8104 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 6.0 V R Forward continuous current I 60 mA F Surge forward current t 10 s I 2.5 A FSM Power dissipation P 100 mW diss Derate linearly from 25C 1.33 mW/C OUTPUT Collector emitter breakdown voltage BV 30 V CEO Emitter collector breakdown voltage BV 7.0 V ECO Collector current I 50 mA C Derate linearly from 25C 2.0 mW/C Power dissipation P 150 mW diss COUPLER Derate linearly from 25 C 3.33 mW/C Total power dissipation P 250 mW tot Storage temperature T -55 to +150 C stg Operating temperature T -55 to +100 C amb Junction temperature T 100 C j max. 10 s, dip soldering: (1) Soldering temperature T 260 C sld distance to seating plane 1.5 mm Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP) ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 10 mA V - 1.25 1.5 V F F Breakdown voltage I = 10 A V 6.0 - - V R BR Reverse current V = 6.0 V I -0.01 10 A R R Capacitance V = 0 V, f = 1.0 MHz C -25 - pF R O Thermal resistance R - 750 - K/W thja OUTPUT Collector emitter capacitance V = 5.0 V, f = 1.0 MHz C -5.2 - pF CE CE V = 10 V, T = 25 C MOC8101 I - 1.0 50 nA CE amp CEO1 Collector emitter dark current V = 10 V, T = 100 C MOC8102 I -1.0 - A CE amp CEO1 Collector emitter breakdown voltage I = 1.0 mA BV 30 - - V C CEO Emitter collector breakdown voltage I = 100 ABV 7.0 - - V E ECO Thermal resistance R - 500 - K/W thja COUPLER Saturation voltage collector emitter I = 5.0 mA V - 0.25 0.4 V F CEsat Coupling capacitance C -0.6 - pF C Note Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements Rev. 1.7, 04-Nov-2020 Document Number: 83660 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000