VS-MURB820PbF, VS-MURB820-1PbF
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Vishay Semiconductors
Ultrafast Rectifier, 8 A FRED Pt
FEATURES
Ultrafast recovery time
Low forward voltage drop
Low leakage current
175 C operating junction temperature
2
TO-263AB (D PAK) TO-262AA
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 C
Base
AEC-Q101 qualified
cathode
2
2
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
1 3 1 3
N/C Anode N/C Anode
MUR.. series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance
VS-MURB820PbF VS-MURB820-1PbF
of forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
PRODUCT SUMMARY
control, guarantee the best overall performance,
2
Package TO-263AB (D PAK), TO-262AA
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
I 8 A
F(AV)
stage of SMPS, UPS, DC/DC converters as well as
V 200 V
R
freewheeling diode in low voltage inverters and chopper
V at I 0.895 V
F F
motor drives.
t 35 ns Their extremely optimized stored charge and low recovery
rr
current minimize the switching losses and reduce over
T max. 175 C
J
dissipation in the switching element and snubbers.
Diode variation Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V 200 V
RRM
Average rectified forward current I Total device, rated V , T = 150 C 8
F(AV) R C
Non-repetitive peak surge current I 100 A
FSM
Peak repetitive forward current I Rated V , square wave, 20 kHz, T = 150 C 16
FM R C
Operating junction and storage temperatures T , T -65 to +175 C
J Stg
ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified)
J
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, V ,
BR
I = 100 A 200 - -
R
blocking voltage V
R
V
I = 8 A - - 0.975
F
Forward voltage V
F
I = 8 A, T = 150 C - - 0.895
F J
V = V rated - - 5
R R
Reverse leakage current I A
R
T = 150 C, V = V rated - - 250
J R R
Junction capacitance C V = 200 V - 25 - pF
T R
Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH
S
Revision: 10-Jul-15 Document Number: 94081
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VS-MURB820PbF, VS-MURB820-1PbF
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified)
J
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
I = 1.0 A, dI /dt = 50 A/s, V = 30 V - - 35
F F R
I = 0.5 A, I = 1.0 A, I = 0.25 A - - 25
F R REC
Reverse recovery time t ns
rr
T = 25 C -20 -
J
= 125 C - 34 -
T
J
I = 8 A
F
T = 25 C - 1.7 -
J
Peak recovery current I dI /dt = 200 A/s A
RRM F
T = 125 C - 4.2 -
J
V = 160 V
R
T = 25 C - 23 -
J
Reverse recovery charge Q nC
rr
T = 125 C - 75 -
J
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and
T , T -65 - 175 C
J Stg
storage temperature range
Thermal resistance,
R --3.0
thJC
junction to case
Thermal resistance,
R -- 50 C/W
thJA
junction to ambient
Thermal resistance, Mounting surface, flat, smooth and
R -0.5 -
thCS
case to heatsink greased
-2.0 - g
Weight
-0.07 - oz.
6.0 12 kgf cm
Mounting torque -
(5.0) (10) (lbf in)
2
Case style TO-263AB (D PAK) MURB820
Marking device
Case style TO-262AA MURB820-1
Revision: 10-Jul-15 Document Number: 94081
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000