MURD620CTG, MURD620CTT4G, NRVUD620CTG, NRVUD620CTT4G SWITCHMODE MURD620CTG, MURD620CTT4G, NRVUD620CTG, NRVUD620CTT4G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 200 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V , T = 140C) R C Per Diode 3.0 Per Device 6.0 Peak Repetitive Forward Current I A F (Rated V , Square Wave, 20 kHz, T = 145C) R C Per Diode 6.0 NonRepetitive Peak Surge Current I A FSM (Surge Applied at Rated Load Conditions Halfwave, 60 Hz) 50 Operating Junction and Storage Temperature Range T , T 65 to +175 C J stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS (Per Diode) Characteristic Symbol Value Unit Thermal Resistance, JunctiontoCase R 9 C/W JC Thermal Resistance, JunctiontoAmbient (Note 1) R 80 C/W JA 1. Rating applies when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (Per Diode) Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage Drop (Note 2) v V F (i = 3 Amps, T = 25C) 1 F C (i = 3 Amps, T = 125C) 0.96 F C (i = 6 Amps, T = 25C) 1.2 F C (i = 6 Amps, T = 125C) 1.13 F C Maximum Instantaneous Reverse Current (Note 2) i A R (T = 25C, Rated dc Voltage) 5 J (T = 125C, Rated dc Voltage) 250 J Maximum Reverse Recovery Time t ns rr (I = 1 Amp, di/dt = 50 Amps/ s, V = 30 V, T = 25C) 35 F R J (I = 0.5 Amp, i = 1 Amp, I = 0.25 A, V = 30 V, T = 25C) 25 F R REC R J 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.