SD101A, SD101B, SD101C www.vishay.com Vishay Semiconductors Small Signal Schottky Diodes FEATURES Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop AEC-Q101 qualified Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 MECHANICAL DATA APPLICATIONS Case: DO-35 HF-detector Weight: approx. 125 mg Protection circuit Cathode band color: black Diode for low currents with a low supply voltage Packaging codes/options: Small battery charger TR/10K per 13 reel (52 mm tape), 50K/box Power supplies TAP/10K per ammopack (52 mm tape), 50K/box DC/DC converter for notebooks PARTS TABLE INTERNAL PART TYPE DIFFERENTATION ORDERING CODE TYPE MARKING REMARKS CONSTRUCTION V = 60 V, V max. 410 mV SD101A-TR or Tape and reel/ R F SD101A Single diode SD101A at I = 1 mA SD101A-TAP ammopack F V = 50 V, V max. 400 mV SD101B-TR or Tape and reel/ R F SD101B Single diode SD101B at I = 1 mA SD101B-TAP ammopack F V = 40 V, V max. 390 mV SD101C-TR or Tape and reel/ R F SD101C Single diode SD101C at I = 1 mA SD101C-TAP ammopack F ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT SD101A V 60 V R Reverse voltage SD101B V 50 V R SD101C V 40 V R Forward continuous current I 30 mA F Peak forward surge current t = 10 s I 2A p FSM Repetitive peak forward current I 150 mA FRM (1) Power dissipation P 310 mW tot Note (1) Valid provided that electrodes are kept at ambient temperature. THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Junction temperature T 125 C j Storage temperature range T - 65 to + 150 C stg (1) Thermal resistance junction to ambient air R 320 K/W thJA Note (1) Valid provided that electrodes are kept at ambient temperature. Rev. 1.7, 06-May-13 Document Number: 85629 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SD101A, SD101B, SD101C www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT SD101A V 60 V (BR) Reverse breakdown voltage I = 10 A SD101B V 50 V R (BR) SD101C V 40 V (BR) V = 50 V SD101A I 200 nA R R Leakage current V = 40 V SD101B I 200 nA R R V = 30 V SD101C I 200 nA R R SD101A V 410 mV F I = 1 mA SD101B V 400 mV F F SD101C V 390 mV F Forward voltage drop SD101A V 1000 mV F I = 15 mA SD101B V 950 mV F F SD101C V 900 mV F SD101A C 2.0 pF D Diode capacitance V = 0 V, f = 1 MHz SD101B C 2.1 pF R D SD101C C 2.2 pF D TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 10.00 100 T = 125 C j 10 T = 100 C 1.00 j T = 75 C j 1 T = 50 C j 0.10 0.1 T = 25 C j 0.01 0.01 0 5 10 1520 2530 3540 4550 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 16204 V - Reverse Voltage (V) V - Forward Voltage (V) 16206 R F Fig. 1 - Reverse Current vs. Reverse Voltage Fig. 3 - Forward Current vs. Forward Voltage 2.0 T = 25 C 1.8 j 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 5 1015 2025 3035 4045 50 16205 V - Reverse Voltage (V) R Fig. 2 - Diode Capacitance vs. Reverse Voltage Rev. 1.7, 06-May-13 Document Number: 85629 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 C - Diode Capacitance (pF) I - Reverse Current (A) D R I - Forward Current (mA) F