P GND V IN NC GL C GND V DRV SiC639, SiC639A www.vishay.com Vishay Siliconix 50 A VRPower Integrated Power Stage DESCRIPTION FEATURES Thermally enhanced PowerPAK MLP55-31L The SiC639 are integrated power stage solutions optimized package for synchronous buck applications to offer high current, high efficiency, and high power density performance. Packaged Vishays Gen IV MOSFET technology and a low in Vishays proprietary 5 mm x 5 mm MLP package, SiC639 side MOSFET with integrated Schottky diode enables voltage regulator designs to deliver up to 50 A Delivers up to 50 A continuous current continuous current per phase. High efficiency performance The internal power MOSFETs utilizes Vishays High frequency operation up to 1.5 MHz state-of-the-art Gen IV TrenchFET technology that delivers Power MOSFETs optimized for 19 V input stage industry benchmark performance to significantly reduce switching and conduction losses. 3.3 V, 5 V PWM logic with tri-state and hold-off Zero current detect control for light load efficiency The SiC639 incorporate an advanced MOSFET gate driver improvement IC that features high current driving capability, adaptive dead-time control, an integrated bootstrap Schottky diode, Low PWM propagation delay (< 20 ns) a thermal warning (THWn) that alerts the system of Faster disable excessive junction temperature, and zero current detection Thermal monitor flag to improve light load efficiency. The drivers are also Under voltage lockout for V compatible with a wide range of PWM controllers an d CIN supports tri-state PWM, 3.3 V, 5 V PWM logic. Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS Multi-phase VRDs for computing, graphics card an d memory Intel IMVP-8/9 VRPower delivery - V , V , V Skylake, Kabylak e CORE GRAPHICS SYSTEM AGENT platforms - V for Apollo Lake platforms CCGI Up to 24 V rail input DC/DC VR modules TYPICAL APPLICATION DIAGRAM 5V Input BOOT PHASE V CIN ZCD EN Output SW DSBL Gate PWM driver PWM controller THWn Fig. 1 - SiC639 and SiC639A Typical Application Diagram S20-0485-Rev. B, 29-Jun-2020 Document Number: 76585 1 For technical questions, contact: powerictechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000P SW GND SW P GND P SW GND GL P GND P GND V V DRV IN THWn V IN DSBL V IN SiC639, SiC639A www.vishay.com Vishay Siliconix PINOUT CONFIGURATION 33 31 30 29 28 27 26 25 24 GL 24 25 26 27 28 29 30 31 PWM 1 1 PWM 23 V V 23 SWH SWH GL GL ZCD EN 2 2 ZCD EN 22 V V 22 SWH SWH 32 CGND V 3 C 3 V CIN GND CIN 21 V V 21 SWH SWH C C 4 4 20 V V 20 GND GND SWH SWH 35 BOOT BOOT 5 5 19 V V 19 PGND SWH SWH P GND 6 6 N.C. V 18 N.C. 18 V SWH SWH 34 VIN PHASE 7 17 V V 17 7 PHASE SWH SWH V IN 16 V V 16 V 8 8 V SWH SWH IN IN 9 10 11 12 13 14 15 15 14 13 12 11 10 9 Top view Bottom view Fig. 2 - SiC639 Pin Configuration PIN CONFIGURATION PIN NUMBER NAME FUNCTION 1 PWM PWM input logic The ZCD EN pin enables or disables zero cross detection on inductor current when it detects PWM = mid. 2 ZCD EN When ZCD EN is LOW, GL stays on until ZCD detected when it detects PWM = mid. When ZCD EN is HIGH, GL turns off when it detects PWM = mid.or PWM = 1 3V Supply voltage for internal logic circuitry CIN 4, 32 C Signal ground GND 5 BOOT High side driver bootstrap voltage 6 N.C. Not connected internally, can be left floating or connected to ground 7 PHASE Return path of high side gate driver 8 to 11, 34 V Power stage input voltage. Drain of high side MOSFET IN 12 to 15, 28, 35 P Power ground GND 16 to 26 V Phase node of the power stage SWH 27, 33 GL Low side MOSFET gate signal 29 V Supply voltage for internal gate driver DRV 30 THWn Thermal warning open drain output 31 DSBL Disable pin. Active low ORDERING INFORMATION PART NUMBER PACKAGE MARKING CODE OPTION SiC639CD-T1-GE3 PowerPAK MLP55-31L SiC639 5 V PWM optimized SiC639ACD-T1-GE3 PowerPAK MLP55-31L SiC639A 3.3 V PWM optimized SiC639DB Reference board S20-0485-Rev. B, 29-Jun-2020 Document Number: 76585 2 For technical questions, contact: powerictechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P GND SW P SW GND P SW GND P GL GND P GND V V IN DRV V THWn IN V DSBL IN