X-On Electronics has gained recognition as a prominent supplier of SIJA52DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIJA52DP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIJA52DP-T1-GE3 Vishay

SIJA52DP-T1-GE3 electronic component of Vishay
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Part No.SIJA52DP-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 40V Vds 20V Vgs PowerPAK SO-8L
Datasheet: SIJA52DP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.504 ea
Line Total: USD 1.5 
Availability - 5820
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5820
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 1.504
10 : USD 1.1693
25 : USD 1.1131
50 : USD 0.9486
100 : USD 0.918
250 : USD 0.823
500 : USD 0.7122
1000 : USD 0.7098
3000 : USD 0.7031
6000 : USD 0.6962

   
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We are delighted to provide the SIJA52DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIJA52DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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6.15 mm SiJA52DP www.vishay.com Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV power MOSFET a, g V (V) R () Max. I (A) Q (Typ.) DS DS(on) D g Tuned for the lowest R -Q FOM DS oss 0.0017 at V = 10 V 60 GS 40 47.5 nC 100 % R and UIS tested g 0.0023 at V = 4.5 V 60 GS Q / Q ratio < 1 optimizes switching gd gs PowerPAK SO-8L Single characteristics Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 D APPLICATIONS D 1 Synchronous rectification S 2 ORing S 3 High power density DC/DC S 4 G 1 G VRMs and embedded DC/DC Top View Bottom View DC/AC inverters N-Channel MOSFET Ordering Information: Load switch S SiJA52DP-T1-GE3 (lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 40 DS V Gate-Source Voltage V +20, -16 GS g T = 25 C 60 C g T = 70 C 60 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 39.6 A b, c T = 70 C 31.3 A A Pulsed Drain Current (t = 100 s) I 150 DM T = 25 C 56.8 C Continuous Source-Drain Diode Current I S b, c T = 25 C 4.3 A Single Pulse Avalanche Current I 35 AS L = 0.1 mH Single Pulse Avalanche Energy E 61 mJ AS T = 25 C 48 C T = 70 C 30.7 C Maximum Power Dissipation P W D b, c T = 25 C 4.8 A b, c T = 70 C 3 A Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit b, f Maximum Junction-to-Ambient t 10 s R 22 26 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 1.7 2.6 thJC Notes a. T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 65 C/W. g. Package limited. S16-0749-Rev. A, 25-Apr-16 Document Number: 67387 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 5.13 mmSiJA52DP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 40 - - V DS GS D V Temperature Coefficient V /T -22 - DS DS J I = 250 A mV/C D V Temperature Coefficient V /T --5.3 - GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 1.1 - 2.4 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = +20 V, -16 V - - 100 nA GSS DS GS V = 40 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 40 V, V = 0 V, T = 55 C - - 10 DS GS J a On-State Drain Current I V 5 V, V = 10 V 30 - - A D(on) DS GS V = 10 V, I = 15 A - 0.0014 0.0017 GS D a Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 10 A - 0.0019 0.0023 GS D a Forward Transconductance g V = 10 V, I = 15 A - 114 - S fs DS D b Dynamic Input Capacitance C - 7150 - iss Output Capacitance C V = 20 V, V = 0 V, f = 1 MHz - 1325 - pF oss DS GS Reverse Transfer Capacitance C - 230 - rss V = 20 V,V = 10 V, I = 10 A - 97.5 150 DS GS D Total Gate Charge Q g -47.5 72 Gate-Source Charge Q V = 20 V,V = 4.5 V, I = 10 A -19.6 - nC gs DS GS D Gate-Drain Charge Q -12.5- gd Output Charge Q V = 20 V, V = 0 V - 50 75 oss DS GS Gate Resistance R f = 1 MHz 0.4 1.1 2.0 g Turn-On Delay Time t -10 20 d(on) Rise Time t -9 18 r V = 20 V, R = 2 DD L I 10 A, V = 10 V, R = 1 D GEN g Turn-Off Delay Time t -3876 d(off) Fall Time t -9 18 f ns Turn-On Delay Time t -30 60 d(on) Rise Time t -77 154 r V = 20 V, R = 2 DD L I 10 A, V = 4.5 V, R = 1 D GEN g Turn-Off Delay Time t -2856 d(off) Fall Time t -16 32 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - - 56.8 S C A Pulse Diode Forward Current (t = 100 s) I -- 150 SM Body Diode Voltage V I = 5 A - 0.71 1.1 V SD S Body Diode Reverse Recovery Time t - 53 106 ns rr Body Diode Reverse Recovery Charge Q - 76 152 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t -31 - a ns Reverse Recovery Rise Time t -22 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-0749-Rev. A, 25-Apr-16 Document Number: 67387 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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