3.3 mm
SiSHA04DN
www.vishay.com
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PowerPAK 1212-8SH
TrenchFET Gen IV power MOSFET
D
D
8
D
D 7
100 % R and UIS tested
g
6
5
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
0.9 mm
1
2
S
3
APPLICATIONS
D
S
4
1 S
G
Switch mode power supplies
Top View Bottom View
Personal computers and servers
Telecom bricks
PRODUCT SUMMARY
G
V (V) 30 VRMs and POL
DS
R max. ( ) at V = 10 V 0.00215
DS(on) GS
R max. ( ) at V = 4.5 V 0.00310
DS(on) GS
S
Q typ. (nC) 22.5
g
N-Channel MOSFET
g
I (A) 40
D
Configuration Single
ORDERING INFORMATION
Package PowerPAK 1212-8
Lead (Pb)-free and halogen-free SiSHA04DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted)
A
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V 30
DS
V
Gate-source voltage V +20, -16
GS
g
T = 25 C 40
C
g
= 70 C 40
T
C
Continuous drain current (T = 150 C) I
J D
a, b
T = 25 C 30.9
A
a, b
T = 70 C 28.3
A
A
Pulsed drain current (t = 300 s) I 80
DM
g
T = 25 C 40
C
Continuous source-drain diode current I
S
a, b
T = 25 C 3.3
A
Single pulse avalanche current I 20
AS
L = 0.1 mH
Single pulse avalanche energy E 20 mJ
AS
T = 25 C 52
C
T = 70 C 43
C
Maximum power dissipation P W
D
a, b
= 25 C 3.7
T
A
a, b
T = 70 C 3.1
A
Operating junction and storage temperature range T , T -55 to +150
J stg
C
c, d
Soldering recommendations (peak temperature) 260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICALMAXIMUMUNIT
a, e
Maximum junction-to-ambient t 10 s R 24 33
thJA
C/W
Maximum junction-to-case (drain) Steady state R 1.9 2.4
thJC
Notes
a. Surface mounted on 1" x 1" FR4 board
b. t = 10 s
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
e. Maximum under steady state conditions is 81 C/W
f. Based on T = 25 C
C
g. Package limited
S18-1178-Rev. A, 26-Nov-2018 Document Number: 76879
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3.3 mmSiSHA04DN
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (T = 25 C, unless otherwise noted)
J
PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT
Static
Drain-source breakdown voltage V V = 0 V, I = 250 A 30 - - V
DS GS D
V temperature coefficient V /T -14 -
DS DS J
I = 250 A mV/C
D
V temperature coefficient V /T --5.5-
GS(th) GS(th) J
Gate-source threshold voltage V V = V , I = 250 A 1.1 - 2.2 V
GS(th) DS GS D
Gate-source leakage I V = 0 V, V = +20 V, -16 V - - 100 nA
GSS DS GS
V = 30 V, V = 0 V - - 1
DS GS
Zero gate voltage drain current I A
DSS
V = 30 V, V = 0 V, T = 55 C - - 10
DS GS J
a
On-state drain current I V 5 V, V = 10 V 40 - - A
D(on) DS GS
V = 10 V, I = 15 A - 0.00180 0.00215
GS D
a
Drain-source on-state resistance R
DS(on)
V = 4.5 V, I = 10 A - 0.00250 0.00310
GS D
a
Forward transconductance g V = 15 V, I = 15 A - 105 S
fs DS D
b
Dynamic
Input capacitance C - 3595 -
iss
Output capacitance C -1040- pF
oss
V = 15 V, V = 0 V, f = 1 MHz
DS GS
Reverse transfer capacitance C -79-
rss
C /C ratio - 0.022 0.044
rss iss
V = 15 V, V = 10 V, I = 10 A -51 77
DS GS D
Total gate charge Q
g
- 22.5 34
V = 15 V, V = 4.5 V, I = 10 A
Gate-source charge Q -8.6- nC
gs DS GS D
Gate-drain charge Q -4 -
gd
Output charge Q V = 15 V, V = 0 V - 30.5 -
DS GS
oss
Gate resistance R f = 1 MHz 0.3 1.25 2.5
g
Turn-on delay time t -24 48
d(on)
Rise time t -1734
r V = 15 V, R = 1.5
DD L
I 10 A, V = 4.5 V, R = 1
D GEN g
Turn-off delay time t -2550
d(off)
Fall time t -10 20
f
ns
Turn-on delay time t -12 24
d(on)
Rise time t -1020
r V = 15 V, R = 1.5
DD L
I 10 A, V = 10 V, R = 1
Turn-off delay time t -3D GEN g 060
d(off)
Fall time t -8 16
f
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I T = 25 C -- 40
C
S
A
Pulse diode forward current I -- 80
SM
Body diode voltage V I = 5 A, V = 0 V - 0.73 1.1 V
S GS
SD
Body diode reverse recovery time t -36 70 ns
rr
Body diode reverse recovery charge Q -24 48 nC
rr I = 10 A, di/dt = 100 A/s,
F
T = 25 C
Reverse recovery fall time t J -16 -
a
ns
Reverse recovery rise time t -20 -
b
Notes
a. Pulse test; pulse width 300 s, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-1178-Rev. A, 26-Nov-2018 Document Number: 76879
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000