X-On Electronics has gained recognition as a prominent supplier of SQR40020ER_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQR40020ER_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQR40020ER_GE3 Vishay

SQR40020ER_GE3 electronic component of Vishay
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Part No.SQR40020ER_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET Automotive N-Channel 40 V D-S 175C MOSFET
Datasheet: SQR40020ER_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.738 ea
Line Total: USD 1.74 
Availability - 6359
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6359
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.738
10 : USD 1.375
100 : USD 1.0868
250 : USD 0.957
500 : USD 0.9339
1000 : USD 0.8514
2000 : USD 0.8514
4000 : USD 0.8184

   
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SQR40020ER_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQR40020ER_GE3 and other electronic components in the MOSFETs category and beyond.

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SQR40020ER www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES TO-252 Reverse Lead DPAK 1 mm max. TrenchFET power MOSFET Package with low thermal resistance 1 mm max. Ni plated drain tab area (heatsink) for top side cooling 100 % R and UIS tested g G AEC-Q101 qualified S D Material categorization: for definitions of compliance D Drain connected to tab. please see www.vishay.com/doc 99912 S G The drain tab (heatsink) is Bottom View Ni plated (at least 80 % of area). Top View D PRODUCT SUMMARY V (V) 40 DS R ( ) at V = 10 V 0.00233 DS(on) GS G I (A) 100 D Configuration Single N-Channel MOSFET TO-252 reverse lead Package DPAK S ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 40 DS V Gate-source voltage V 20 GS a T = 25 C 100 C Continuous drain current I D T = 125 C 87.5 C Continuous source current (diode conduction) I 97 A S b Pulsed drain current I 280 DM Single pulse avalanche current I 46 AS L = 0.1 mH Single pulse avalanche energy E 105.8 mJ AS T = 25 C 107 C b Maximum power dissipation P W D T = 125 C 35 C Operating junction and storage temperature range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT c Junction-to-ambient PCB mount R 50 thJA C/W Junction-to-case (drain) R 1.4 thJC Notes a. Package limited b. Pulse test pulse width 300 s, duty cycle 2 % c. When mounted on 1 square PCB (FR4 material) S19-0202-Rev. A, 04-Mar-2019 Document Number: 76927 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQR40020ER www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 40 - - DS GS D V Gate-source threshold voltage V V = V , I = 250 A 2.5 3.0 3.5 GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 40 V - - 1 GS DS A Zero gate voltage drain current I V = 0 V V = 40 V, T = 125 C - - 50 DSS GS DS J V = 0 V V = 40 V, T = 175 C - - 500 A GS DS J a On-state drain current I V = 10 V V 5 V 50 - - A D(on) GS DS V = 10 V I = 20 A - 0.00190 0.00233 GS D a Drain-source on-state resistance R V = 10 V I = 20 A, T = 125 C - - 0.00390 DS(on) GS D J V = 10 V I = 20 A, T = 175 C - - 0.00470 GS D J b Forward transconductance g V = 15 V, I = 20 A - 84 - S fs DS D b Dynamic Input capacitance C - 5405 8000 iss Output capacitance C V = 0 V V = 25 V, f = 1 MHz - 1942 2700 pF oss GS DS Reverse transfer capacitance C - 175 250 rss c Total gate charge Q - 84 130 g c Gate-source charge Q V = 10 V V = 20 V, I = 50 A -29.5 - nC gs GS DS D c Gate-drain charge Q -19.5 - gd Gate resistance R f = 1 MHz 1 2 3 g c Turn-on delay time t -17 30 d(on) c Rise time t -17 30 r V = 20 V, R = 0.4 DD L ns c I 50 A, V = 10 V, R = 1 Turn-off delay time t D GEN g -34 60 d(off) c Fall time t -18 35 f b Source-Drain Diode Ratings and Characteristics a Pulsed current I - - 280 A SM Forward voltage V I = 25 A, V = 0 V - 0.8 1.5 V SD F GS Body diode reverse recovery time t -41 85 ns rr Body diode reverse recovery charge Q -28 60 nC rr I = 50 A, di/dt = 100 A/s F Reverse recovery fall time t -24 - a ns Reverse recovery rise time t -17 - b Body diode peak reverse recovery current I --1.36 - A RM(REC) Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0202-Rev. A, 04-Mar-2019 Document Number: 76927 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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