X-On Electronics has gained recognition as a prominent supplier of SQR40N10-25-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQR40N10-25-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQR40N10-25-GE3 Vishay

SQR40N10-25-GE3 electronic component of Vishay
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Part No.SQR40N10-25-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET,N CH,W DIODE,100V,40A,DPAK
Datasheet: SQR40N10-25-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.743 ea
Line Total: USD 2.74 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 2.743
10 : USD 2.3595
25 : USD 1.989
100 : USD 1.69
250 : USD 1.5015
500 : USD 1.365

   
Manufacturer
Product Category
Transistor Polarity
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Approval Category
Operating Temperature Min
Operating Temperature Range
Voltage Vgs Max
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We are delighted to provide the SQR40N10-25-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQR40N10-25-GE3 and other electronic components in the MOSFETs category and beyond.

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SQR40N10-25 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES TrenchFET Power MOSFET PRODUCT SUMMARY Package with Low Thermal Resistance V (V) 100 DS 100 % R and UIS Tested R ( ) at V = 10 V 0.025 g DS(on) GS AEC-Q101 Qualified R ( ) at V = 4.5 V 0.029 DS(on) GS I (A) 40 Material categorization: D For definitions of compliance please see Configuration Single www.vishay.com/doc 99912 D TO-252 Reverse Lead DPAK G Drain Connected to Tab S GD S Top View N-Channel MOSFET ORDERING INFORMATION Package TO-252 Reverse Lead DPAK Lead (Pb)-free and Halogen-free SQR40N10-25-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS a T = 25 C 40 C Continuous Drain Current I D T = 125 C 26 C a Continuous Source Current (Diode Conduction) I 40 A S b Pulsed Drain Current I 160 DM Single Pulse Avalanche Current I 40 AS L = 0.1 mH Single Pulse Avalanche Energy E 80 mJ AS T = 25 C 136 C b Maximum Power Dissipation P W D T = 125 C 45 C Operating Junction and Storage Temperature Range T , T - 55 to + 175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 50 thJA C/W Junction-to-Case (Drain) R 1.1 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR-4 material). S12-2198-Rev. E, 24-Sep-12 Document Number: 69060 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQR40N10-25 www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 - 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 100 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 100 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 100 V, T = 175 C - - 250 GS DS J a On-State Drain Current I V = 10 V V 5 V 50 - - A D(on) GS DS V = 10 V I = 40 A - 0.019 0.025 GS D V = 10 V I = 40 A, T = 125 C - - 0.050 GS D J a R Drain-Source On-State Resistance DS(on) V = 10 V I = 40 A, T = 175 C - - 0.063 GS D J V = 4.5 V I = 20 A - 0.021 0.029 GS D b Forward Transconductance g V = 15 V, I = 40 A - 73 - S fs DS D b Dynamic Input Capacitance C - 2703 3380 iss Output Capacitance C -V = 0 V V = 25 V, f = 1 MHz312390 pF oss GS DS Reverse Transfer Capacitance C -127160 rss c Total Gate Charge Q -46 70 g c Gate-Source Charge Q -8V = 10 V V = 50 V, I = 40 A.2- nC gs GS DS D c Gate-Drain Charge Q -13- gd Gate Resistance R f = 1 MHz 1 2 3.1 g c Turn-On Delay Time t -11 17 d(on) c Rise Time t -11 17 r V = 50 V, R = 1.25 DD L ns c I 40 A, V = 10 V, R = 1 D GEN g Turn-Off Delay Time t -2741 d(off) c Fall Time t -69 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I - - 160 A SM Forward Voltage V I = 40 A, V = 0 V - 0.9 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S12-2198-Rev. E, 24-Sep-12 Document Number: 69060 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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