X-On Electronics has gained recognition as a prominent supplier of SQR70090ELR_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQR70090ELR_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQR70090ELR_GE3 Vishay

SQR70090ELR_GE3 electronic component of Vishay
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Part No.SQR70090ELR_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 100V Vds 86A Id AEC-Q101 Qualified
Datasheet: SQR70090ELR_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.738 ea
Line Total: USD 1.74 
Availability - 2287
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
268
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 1.3842
10 : USD 1.1913
25 : USD 1.1841
100 : USD 1.0016
250 : USD 0.8867

2287
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.738
10 : USD 1.221
100 : USD 0.9053
250 : USD 0.9042
500 : USD 0.7854
1000 : USD 0.7271
2000 : USD 0.7271
4000 : USD 0.6985

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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We are delighted to provide the SQR70090ELR_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQR70090ELR_GE3 and other electronic components in the MOSFETs category and beyond.

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SQR70090ELR www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES TO-252 Reverse Lead DPAK 1 mm max. TrenchFET power MOSFET Unplated 1 mm max. Unplated drain tab (heatsink) Package with low thermal resistance AEC-Q101 qualified 100 % R and UIS tested g G S Material categorization: for definitions of D D compliance please see www.vishay.com/doc 99912 Drain connected to tab. S G The drain tab (heatsink) is D Top View Bottom View unplated (at least 80 % of area). PRODUCT SUMMARY V (V) 100 DS R ( ) at V = 10 V 0.0087 DS(on) GS G R ( ) at V = 4.5 V 0.0106 DS(on) GS I (A) 86 D Configuration Single N-Channel MOSFET S Package TO-252 Reverse Lead DPAK ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS T = 25 C 86 C Continuous Drain Current I D T = 125 C 50 C a Continuous Source Current (Diode conduction) I 100 A S b Pulsed Drain Current I 150 DM Single Pulse Avalanche Current I 45 AS L = 0.1 mH Single Pulse Avalanche Energy E 101 mJ AS T = 25 C 136 C b Maximum Power Dissipation P W D T = 125 C 45 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB mount R 50 thJA C/W Junction-to-Case (Drain) R 1.1 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). S16-1763-Rev. A, 05-Sep-16 Document Number: 75462 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQR70090ELR www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 2.0 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 100 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 100 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 100 V, T = 175 C - - 250 GS DS J a On-State Drain Current I V = 10 V V 5 V 50 - - A D(on) GS DS V = 10 V I = 25 A - 0.0072 0.0087 GS D V = 4.5 V I = 20 A - 0.0087 0.0106 GS D a Drain-Source On-State Resistance R DS(on) V = 10 V I = 25 A, T = 125 C - - 0.0144 GS D J V = 10 V I = 25 A, T = 175 C - - 0.0177 GS D J b Forward Transconductance g V = 15 V, I = 25 A - 80 - S fs DS D b Dynamic Input Capacitance C - 2550 3500 iss Output Capacitance C -V = 0 V V = 25 V, f = 1 MHz13501900 pF oss GS DS Reverse Transfer Capacitance C -101140 rss c Total Gate Charge Q -42 65 g c Gate-Source Charge Q -7V = 10 V V = 50 V, I = 50 A- nC gs GS DS D c Gate-Drain Charge Q -8- gd Gate Resistance R f = 1 MHz 1.4 2.9 4.4 g c Turn-On Delay Time t -12 20 d(on) c Rise Time t -5 10 r V = 50 V, R = 1 DD L ns I 50 A, V = 10 V, R = 1 c D GEN g Turn-Off Delay Time t -3560 d(off) c Fall Time t -615 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- 150 A SM Forward Voltage V I = 25 A, V = 0 V - 0.88 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-1763-Rev. A, 05-Sep-16 Document Number: 75462 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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