Preliminary Technical Information TM X3-Class HiPerFET V = 250V IXFT170N25X3HV DSS Power MOSFET I = 170A IXFH170N25X3 D25 R 7.4m DS(on) IXFK170N25X3 TO-268HV (IXFT) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-247 (IXFH) V T = 25 C to 150 C 250 V DSS J V T = 25 C to 150 C, R = 1M 250 V DGR J GS V Continuous 20 V GSS V Transient 30 V G GSM D S D (Tab) I T = 25 C 170 A D25 C I External Lead Current Limit 160 A L(RMS) TO-264 (IXFK) I T = 25 C, Pulse Width Limited by T 400 A DM C JM I T = 25 C85A A C E T = 25 C 2.3 J AS C dv/dt I I , V V , T 150C 20 V/ns S DM DD DSS J G P T = 25 C 890 W D C D D (Tab) S T -55 ... +150 C J T 150 C G = Gate D = Drain JM S = Source Tab = Drain T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L Features T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque (TO-247 & TO-264) 1.13 / 10 Nm/lb.in d International Standard Packages Weight TO-268HV 4 g Low R and Q DS(ON) G TO-247 6 g Avalanche Rated TO-264 10 g Low Package Inductance Advantages Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J High Power Density BV V = 0V, I = 1mA 250 V Easy to Mount DSS GS D Space Savings V V = V , I = 4mA 2.5 4.5 V GS(th) DS GS D I V = 20V, V = 0V 100 nA GSS GS DS Applications I V = V , V = 0V 10 A DSS DS DSS GS Switch-Mode and Resonant-Mode T = 125C 1 mA J Power Supplies DC-DC Converters R V = 10V, I = 0.5 I , Note 1 6.1 7.4 m DS(on) GS D D25 PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 2017 IXYS CORPORATION, All Rights Reserved. DS100809C(11/17) IXFT170N25X3HV IXFH170N25X3 IXFK170N25X3 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 60A, Note 1 66 110 S fs DS D R Gate Input Resistance 1.3 Gi C 13.5 nF iss C V = 0V, V = 25V, f = 1MHz 2.3 nF oss GS DS C 1.6 pF rss Effective Output Capacitance C 800 pF o(er) Energy related V = 0V GS C 3280 pF V = 0.8 V o(tr) Time related DS DSS t 18 ns d(on) Resistive Switching Times t 10 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 62 ns d(off) R = 5 (External) G t 7 ns f Q 190 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 55 nC gs GS DS DSS D D25 Q 45 nC gd R 0.14 C/W thJC R TO-247 0.21 C/W thCS TO-264 0.15 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 170 A S GS I Repetitive, pulse Width Limited by T 680 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 140 ns rr I = 85A, -di/dt = 100A/ s F Q 770 nC RM V = 100V R I 11 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537