X-On Electronics has gained recognition as a prominent supplier of BSZ011NE2LS5IATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSZ011NE2LS5IATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSZ011NE2LS5IATMA1 Infineon

Name: BSZ011NE2LS5IATMA1
Brand: Infineon
SKU: BSZ011NE2LS5IATMA1_Infineon
Availability: OutOfStock
Rating: 5 (11 reviews)

BSZ011NE2LS5IATMA1 electronic component of Infineon

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Part No.	BSZ011NE2LS5IATMA1
Manufacturer:	Infineon
Category:	MOSFETs
Description:	MOSFET 25V Mosfet 11mOhm PQFN 3x3
Datasheet:	BSZ011NE2LS5IATMA1 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 3.1705 ea
Line Total: USD 3.17

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

BSZ011NE2LS5IATMA1 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 27 Dec to Thu. 02 Jan MOQ : 1 Multiples : 1	1 : USD 3.1705 10 : USD 2.1173 100 : USD 1.8873 500 : USD 1.7004 1000 : USD 1.6089

0 Ship by Wed. 25 Dec to Fri. 27 Dec MOQ : 1 Multiples : 1	1 : USD 7.9216 10 : USD 2.8578 100 : USD 2.3063

We are delighted to provide the BSZ011NE2LS5IATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSZ011NE2LS5IATMA1 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

BSZ011NE2LS5I MOSFET TM TSDSON-8 FL OptiMOS 5 Power-Transistor , 25 V (enlarged source interconnection) Features Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resistance R V =4.5V DS(on) GS 100% avalanche tested N-channel Pb-free lead plating RoHS compliant Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial Applications S1 8D S2 7D Table 1 Key Performance Parameters S3 6D Parameter Value Unit G4 5D V 25 V DS R 1.1 m DS(on),max I 202 A D Q oss 29 nC Q G(0V..4.5V) 17 nC Type / Ordering Code Package Marking Related Links BSZ011NE2LS5I PG-TSDSON-8 FL 11NE25I - Final Data Sheet 1 Rev. 2.1, 2020-10-23TM OptiMOS 5 Power-Transistor , 25 V BSZ011NE2LS5I Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Package Outlines . 10 Revision History 11 Trademarks . 11 Disclaimer 11 Final Data Sheet 2 Rev. 2.1, 2020-10-23

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CYP may also be referenced as

Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
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International Rectifier HiRel Products
INTL RECTIFIER
IR
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Manufacturer Infineon Infineon
Product Category MOSFETs MOSFETs
RoHS - XON Y Y
Id - Continuous Drain Current 40 A 40 A
Vds - Drain-Source Breakdown Voltage 25 V 25 V
Rds On - Drain-Source Resistance 1.1 mOhms 1.1 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 1.2 V 1.2 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 69 W 69 W
Mounting Style Smd/Smt Smd/Smt
Package / Case TSDSON - 8 FL TSDSON - 8 FL
Packaging Cut Tape Cut Tape
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 16 V 16 V
Qg - Gate Charge 17 nC 17 nC
Channel Mode Enhancement Enhancement
Configuration Single Single
Series Optimos Optimos
Transistor Type 1 N - Channel 1 N - Channel
Brand Infineon Technologies Infineon Technologies
Fall Time 3 ns 3 ns
Product Type Mosfet Mosfet
Rise Time 4 ns 4 ns
Factory Pack Quantity : 5000 5000
Subcategory Mosfets Mosfets
Typical Turn-Off Delay Time 26 ns 26 ns
Typical Turn-On Delay Time 5 ns 5 ns