SM6A27 www.vishay.com Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES Junction passivation optimized design passivated anisotropic rectifier technology T = 175 C capability suitable for high reliability J and automotive requirement Low leakage current Low forward voltage drop High surge capability DO-218AB Meets ISO7637-2 surge specification Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C AEC-Q101 qualified Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS TYPICAL APPLICATIONS V 22 V WM Use in sensitive electronics protection against voltage V 27 V BR transients induced by inductive load switching and lighting, P (10 x 1000 s) 4600 W PPM especially for automotive load dump protection application. P 6 W D I 90 A RSM MECHANICAL DATA I 600 A FSM Case: DO-218AB T max. 175 C J Molding compound meets UL 94 V-0 flammability rating Polarity Uni-directional Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Package DO-218AB Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: Heatsink is anode MAXIMUM RATINGS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation with 10/1000 s waveform P 4600 W PPM Power dissipation on infinite heatsink at T = 25 C (fig. 1) P 6.0 W C D Non-repetitive peak reverse surge current for 10 s/10 ms exponentially I 90 A RSM decaying waveform Maximum working stand-off voltage V 22.0 V WM Peak forward surge current 8.3 ms single half sine-wave I 600 A FSM Operating junction and storage temperature range T , T -55 to +175 C J STG ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A BREAKDOWN VOLTAGE TEST CURRENT STAND-OFF VOLTAGE V AT I BR T DEVICE TYPE I V T WM (V) (mA) (V) MIN. MAX. SM6A27 24 30 10 22 Revision: 23-Apr-14 Document Number: 88383 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SM6A27 www.vishay.com Vishay General Semiconductor ADDITIONAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Zener voltage temperature coefficient I = 10 mA V - - 36 mV/C Z ZTC Clamping voltage for 10 s/10 ms I = 65 A V - - 40.0 V PP C exponentially decaying waveform I = 6.0 A - - 0.99 F (1) Instantaneous forward voltage V V F I = 100 A - 0.94 - F T = 25 C - - 0.5 J Reverse leakage current Rated V I A WM R T = 175 C - - 20.0 J Note (1) Measured on a 300 s square pulse width THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Typical thermal resistance, junction to case R 0.95 C/W JC ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 13 diameter plastic tape and reel, (1) SM6A27HE3/2D 2.550 2D 750 anode towards the sprocket hole Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 8.0 6000 5000 6.0 4000 3000 4.0 2000 2.0 1000 0 0 50 150 200 25 50 75 100 125 150 175 0 100 Case Temperature (C) Case Temperature (C) Fig. 1 - Power Derating Curve Fig. 2 - Load Dump Power Characteristics (10 ms Exponential Waveform) Revision: 23-Apr-14 Document Number: 88383 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Power Dissipation (W) Load Dump Power (W)