SM6S10AT thru SM6S43AT www.vishay.com Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES Junction passivation optimized design passivated anisotropic rectifier technology T = 175 C capability suitable for high reliability J and automotive requirement Available in uni-directional polarity only Low leakage current Low forward voltage drop High surge capability Meets ISO7637-2 surge specification (varied by test condition) DO-218 Compatible Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C AEC-Q101 qualified - Automotive ordering code: base P/NHE3 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS V 10 V to 43 V WM TYPICAL APPLICATIONS V 11.1 V to 52.8 V BR Use in sensitive electronics protection against voltage P (10 x 1000 s) 4600 W PPM transients induced by inductive load switching and lighting, P (10 x 10 000 s) 3600 W PPM especially for automotive load dump protection application. P 6 W D I 600 A FSM MECHANICAL DATA T max. 175 C J Case: DO-218AC Molding compound meets UL 94 V-0 flammability rating Polarity Uni-directional Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Package DO-218AC Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: heatsink is anode MAXIMUM RATINGS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL VALUEUNIT with 10/1000 s waveform 4600 Peak pulse power dissipation P W PPM with 10/10 000 s waveform 3600 Power dissipation on infinite heatsink at T = 25 C (fig. 1) P 6.0 W C D (1) Peak pulse current with 10/1000 s waveform I See next table A PPM Peak forward surge current 8.3 ms single half sine-wave I 600 A FSM Operating junction and storage temperature range T , T -55 to +175 C J STG Note (1) Non-repetitive current pulse at T = 25 C A Revision: 03-Dec-2018 Document Number: 87735 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SM6S10AT thru SM6S43AT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C BREAKDOWN TYPICAL MAXIMUM MAX. PEAK MAXIMUM MAXIMUM VOLTAGE TEMP. TEST STAND-OFF REVERSE PULSE REVERSE CLAMPING V (V) BR DEVICE CURRENT VOLTAGE LEAKAGE CURRENT COEFFICIENT LEAKAGE VOLTAGE (1) TYPE I V AT V AT 10/1000 s OF V T WM WM BR AT V AT I WM PPM (mA) (V) T = 175 C WAVEFORM J T MIN. NOM. MAX. I (A) V (V) D C I (A) (A) D (%/C) SM6S10AT 11.1 11.7 12.3 5.0 10.0 15 250 271 17.0 0.069 SM6S11AT 12.2 12.9 13.5 5.0 11.0 10 150 253 18.2 0.072 SM6S12AT 13.3 14.0 14.7 5.0 12.0 10 150 231 19.9 0.074 SM6S13AT 14.4 15.2 15.9 5.0 13.0 10 150 214 21.5 0.076 SM6S14AT 15.6 16.4 17.2 5.0 14.0 10 150 198 23.2 0.078 SM6S15AT 16.7 17.6 18.5 5.0 15.0 10 150 189 24.4 0.080 SM6S16AT 17.8 18.8 19.7 5.0 16.0 10 150 177 26.0 0.081 SM6S17AT 18.9 19.9 20.9 5.0 17.0 10 150 167 27.6 0.082 SM6S18AT 20.0 21.1 22.1 5.0 18.0 10 150 158 29.2 0.083 SM6S20AT 22.2 23.4 24.5 5.0 20.0 10 150 142 32.4 0.085 SM6S22AT 24.4 25.7 26.9 5.0 22.0 10 150 130 35.5 0.086 SM6S24AT 26.7 28.1 29.5 5.0 24.0 10 150 118 38.9 0.087 SM6S26AT 28.9 30.4 31.9 5.0 26.0 10 150 109 42.1 0.088 SM6S28AT 31.1 32.8 34.4 5.0 28.0 10 150 101 45.4 0.089 SM6S30AT 33.3 35.1 36.8 5.0 30.0 10 150 95 48.4 0.090 SM6S33AT 36.7 38.7 40.6 5.0 33.0 10 150 86 53.3 0.091 SM6S36AT 40.0 42.1 44.2 5.0 36.0 10 150 79 58.1 0.091 SM6S40AT 44.4 46.8 49.1 5.0 40.0 10 150 71 64.5 0.092 SM6S43AT 47.8 50.3 52.8 5.0 43.0 10 150 66 69.4 0.093 Notes For all types maximum V = 1.9 V at I = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses F F per minute maximum (1) To calculate V vs. junction temperature, use the following formula: V at T = V at 25 C x (1 + T x (T - 25)) BR BR J BR J THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL VALUE UNIT Typical thermal resistance, junction to case R 0.95 C/W JC ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 13 diameter plastic tape and reel, (1) SM6S10ATHE3/I 2.550 I 750 anode towards the sprocket hole Note (1) AEC-Q101 qualified Revision: 03-Dec-2018 Document Number: 87735 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000