X-On Electronics has gained recognition as a prominent supplier of SM6S30AHE3_A/I ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. SM6S30AHE3_A/I ESD Suppressors / TVS Diodes are a product manufactured by Vishay. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

SM6S30AHE3_A/I Vishay

SM6S30AHE3_A/I electronic component of Vishay
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Part No.SM6S30AHE3_A/I
Manufacturer: Vishay
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes 6W,30V 5%,SMD PAR AEC-Q101 Qualified
Datasheet: SM6S30AHE3_A/I Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.899 ea
Line Total: USD 2.9 
Availability - 470
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
470
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 2.899
10 : USD 2.645
25 : USD 2.6334
100 : USD 2.2638
750 : USD 1.8596
4500 : USD 1.8133

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Tradename
Vf - Forward Voltage
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SM6S30AHE3_A/I from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SM6S30AHE3_A/I and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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SM6S10A thru SM6S36A www.vishay.com Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES Junction passivation optimized design passivated anisotropic rectifier technology T = 175 C capability suitable for high reliability J and automotive requirement Available in uni-directional polarity only Low leakage current Low forward voltage drop DO-218AB High surge capability Meets ISO7637-2 surge specification (varied by test condition) Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS V 10 V to 36 V WM TYPICAL APPLICATIONS V 11.1 V to 44.2 V BR Use in sensitive electronics protection against voltage P (10 x 1000 s) 4600 W PPM transients induced by inductive load switching and lighting, P (10 x 10 000 s) 3600 W PPM especially for automotive load dump protection application. P 6 W D I 600 A FSM MECHANICAL DATA T max. 175 C J Case: DO-218AB Polarity Uni-directional Molding compound meets UL 94 V-0 flammability rating Package DO-218AB Base P/NHE3 X - RoHS-compliant and AEC-Q101 qualified (X denotes revision code e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: heatsink is anode MAXIMUM RATINGS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL VALUEUNIT with 10/1000 s waveform 4600 Peak pulse power dissipation P W PPM with 10/10 000 s waveform 3600 Power dissipation on infinite heatsink at T = 25 C (fig. 1) P 6.0 W C D (1) Peak pulse current with 10/1000 s waveform I See next table A PPM Peak forward surge current 8.3 ms single half sine-wave I 600 A FSM Operating junction and storage temperature range T , T -55 to +175 C J STG Note (1) Non-repetitive current pulse at T = 25 C A Revision: 04-Dec-2018 Document Number: 88384 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SM6S10A thru SM6S36A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C TYPICAL BREAKDOWN MAXIMUM MAX. PEAK MAXIMUM MAXIMUM VOLTAGE TEMP. TEST STAND-OFF REVERSE PULSE REVERSE CLAMPING V (V) DEVICE CURRENT VOLTAGE LEAKAGE CURRENT COEFFICIENT BR LEAKAGE VOLTAGE (1) TYPE I V AT V AT 10/1000 s OF V T WM WM BR AT V AT I WM PPM (mA) (V) T = 175 C WAVEFORM J T MIN. NOM. MAX. I (A) V (V) D C I (A) (A) D (%/C) SM6S10A 11.1 11.7 12.3 5.0 10.0 15 250 271 17.0 0.069 SM6S11A 12.2 12.9 13.5 5.0 11.0 10 150 253 18.2 0.072 SM6S12A 13.3 14.0 14.7 5.0 12.0 10 150 231 19.9 0.074 SM6S13A 14.4 15.2 15.9 5.0 13.0 10 150 214 21.5 0.076 SM6S14A 15.6 16.4 17.2 5.0 14.0 10 150 198 23.2 0.078 SM6S15A 16.7 17.6 18.5 5.0 15.0 10 150 189 24.4 0.080 SM6S16A 17.8 18.8 19.7 5.0 16.0 10 150 177 26.0 0.081 SM6S17A 18.9 19.9 20.9 5.0 17.0 10 150 167 27.6 0.082 SM6S18A 20.0 21.1 22.1 5.0 18.0 10 150 158 29.2 0.083 SM6S20A 22.2 23.4 24.5 5.0 20.0 10 150 142 32.4 0.085 SM6S22A 24.4 25.7 26.9 5.0 22.0 10 150 130 35.5 0.086 SM6S24A 26.7 28.1 29.5 5.0 24.0 10 150 118 38.9 0.087 SM6S26A 28.9 30.4 31.9 5.0 26.0 10 150 109 42.1 0.088 SM6S28A 31.1 32.8 34.4 5.0 28.0 10 150 101 45.4 0.089 SM6S30A 33.3 35.1 36.8 5.0 30.0 10 150 95 48.4 0.090 SM6S33A 36.7 38.7 40.6 5.0 33.0 10 150 86 53.3 0.091 SM6S36A 40.0 42.1 44.2 5.0 36.0 10 150 79 58.1 0.091 Notes For all types maximum V = 1.9 V at I = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses F F per minute maximum (1) To calculate V vs. junction temperature, use the following formula: V at T = V at 25 C x (1 + T x (T - 25)) BR BR J BR J THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL VALUE UNIT Typical thermal resistance, junction to case R 0.95 C/W JC ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 13 diameter plastic tape and reel, (1) SM6S10AHE3 A/I 2.550 I 750 anode towards the sprocket hole Note (1) AEC-Q101 qualified Revision: 04-Dec-2018 Document Number: 88384 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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