SS2FH10 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES Available eSMP Series Low profile package Ideal for automated placement Low forward voltage drop, low power losses Low leakage current Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Top view Bottom view Wave and reflow solderable SMF (DO-219AB) AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 Cathode Anode Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 click logo to get started DESIGN SUPPORT TOOLS TYPICAL APPLICATIONS For use in high frequency inverters, freewheeling, DC/DC Models converters, and polarity protection in commercial, industrial, Available and automotive applications. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: SMF (DO-219AB) I 2.0 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 100 V RRM Base P/N-M3 - halogen-free, RoHS-compliant I 50 A FSM Base P/NHM3 - halogen-free, RoHS-compliant, and V at I = 2.0 A (T = 125 C) 0.63 V AEC-Q101 qualified F F A T max. 175 C Terminals: matte tin plated leads, solderable per J J-STD-002 and JESD 22-B102 Package SMF (DO-219AB) M3 and HM3 suffix meets JESD 201 class 2 whisker test Circuit configuration Single Polarity: color band denotes the cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SS2FH10 UNIT Device marking code 210 Maximum repetitive peak reverse voltage V 100 V RRM (1) Maximum average forward rectified current (fig. 1) I 2.0 A F(AV) Non-repetitive peak forward surge current 8.3 ms single half I 50 A FSM sine-wave at T = 25 C J (init) Operating junction and storage temperature range T , T -55 to +175 C J STG Note (1) Free air, mounted on recommended copper pad area Revision: 06-Aug-2018 Document Number: 87749 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SS2FH10 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 1.0 A 0.71 - F T = 25 C A I = 2.0 A 0.77 0.86 F (1) Instantaneous forward voltage V V F I = 1.0 A 0.56 - F T = 125 C A I = 2.0 A 0.63 0.70 F T = 25 C -5 A (2) Reverse current V = 100 V I A R R T = 125 C 65 160 A Typical junction capacitance 4.0 V, 1 MHz C 70 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 c unless otherwise noted) A PARAMETER SYMBOL SS2FH10 UNIT (1)(2)(3) R 125 JA Typical thermal resistance C/W (2)(3) R 21 JM Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (2) Device mounted on FR4 PCB, 2 oz. standard footprint (3) Thermal resistance R - junction to ambient R - junction to mount JA JM ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SS2FH10-M3/H 0.015 H 3000 7 diameter plastic tape and reel SS2FH10-M3/I 0.015 I 10 000 13 diameter plastic tape and reel (1) SS2FH10HM3/H 0.015 H 3000 7 diameter plastic tape and reel (1) SS2FH10HM3/I 0.015 I 10 000 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 06-Aug-2018 Document Number: 87749 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000