TCET2200 Vishay Semiconductors Optocoupler, Phototransistor Output (Dual Channel) FEATURES High common mode rejection CTR offered in 5 groups Low temperature coefficient of CTR Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC V 17197 6 DE AGENCY APPROVALS C UL1577, file no. E52744 system code H, double protection 15123-2 cUL tested to CSA 22.2 bulletin 5A, double protection DESCRIPTION DIN EN 60747-5-2 (VDE 0884) The TCET2200 consists of a phototransistor optically DIN EN 60747-5-5 pending coupled to a gallium arsenide infrared-emitting diode in a 8 pin plastic dual inline package. FIMKO VDE STANDARDS These couplers perform safety functions according to the following equipment standards: DIN EN 60747-5-2 (VDE 0884) Optocoupler for electrical safety requirements IEC 60950/EN 60950 Office machines (applied for reinforced isolation for mains voltage 400 V ) RMS VDE 0804 Telecommunication apparatus and data processing IEC 60065 Safety for mains-operated electronic and related household apparatus ORDERING INFORMATION DIP T C E T 2200 PART NUMBER 7.62 mm CTR (%) AGENCY CERTIFIED/PACKAGE 5 mA UL, cUL, VDE, FIMKO 50 to 600 DIP-8 TCET2200 (1) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 6V R Forward current I 60 mA F Forward surge current t 10 s I 1.5 A p FSM Power dissipation P 70 mW diss Junction temperature T 125 C j Document Number: 81180 For technical questions, contact: optocoupleranswers vishay.com www.vishay.com Rev. 1.1, 10-Dec-10 1 TCET2200 Optocoupler, Phototransistor Output Vishay Semiconductors (Dual Channel) (1) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT OUTPUT Collector emitter voltage V 70 V CEO Emitter collector voltage V 7V ECO Collector current I 50 mA C Collector peak current t /T = 0.5, t 10 ms I 100 mA p p CM Power dissipation P 70 mW diss Junction temperature T 125 C j COUPLER Isolation test voltage (RMS) t = 1 s V 5300 V ISO RMS Isolation voltage V 890 V IORM P Total power dissipation P 200 mW tot Operating ambient temperature range T - 55 to + 100 C amb Storage temperature range T - 55 to + 150 C stg (2) Soldering temperature 2 mm from case, t 10 s T 260 C sld Notes (1) Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices. ELECTRICAL CHARACTERISTCS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 50 mA V 1.25 1.6 V F F Junction capacitance V = 0 V, f = 1 MHz C 50 pF R j OUTPUT Collector emitter voltage I = 1 mA V 70 V C CEO Emitter collector voltage I = 100 A V7V E ECO V = 20 V, I = 0 A, CE F Collector emitter cut-off current I 10 100 nA CEO E = 0 COUPLER Collector emitter saturation voltage I = 10 mA, I = 1 mA V 0.3 V F C CEsat V = 5 V, I = 10 mA, CE F Cut-off frequency f 110 kHz c R = 100 L Coupling capacitance f = 1 MHz C 0.6 pF k Note Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT I /I V = 5 V, I = 5 mA TCET2200 CTR 50 600 % C F CE F www.vishay.com For technical questions, contact: optocoupleranswers vishay.com Document Number: 81180 2 Rev. 1.1, 10-Dec-10