33 3 TSSP980.. www.vishay.com Vishay Semiconductors IR Receiver Module for Light Barrier Systems FEATURES Up to 2 m for presence and proximity sensing Uses continuous AC signal or burst pattern of infrared light PIN diode and sensor IC in one package Low supply current Shielding against EMI Visible light is suppressed by IR filter 1 22 Insensitive to supply voltage ripple and noise 33 19026 Supply voltage: 2.0 V to 3.6 V DESIGN SUPPORT TOOLS AVAILABLE Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3D Models APPLICATIONS Reflective sensors for hand dryers, towel or soap MECHANICAL DATA dispensers, water faucets, toilet flush Pinning: Vending machine fall detection 1 = OUT, 2 = GND, 3 = V S Security and pet gates Person or object vicinity activation DESCRIPTION Fast proximity sensors for toys, robotics, drones, and The TSSP980.. is a compact infrared detector module for other consumer and industrial uses presence, proximity, or light curtain applications. It provides an active low output in response to infrared bursts at 940 nm. The frequency of the burst should correspond to the carrier frequency shown in the parts table. This component has not been qualified according to automotive specifications. PARTS TABLE 38 kHz TSSP98038 Carrier frequency 56 kHz TSSP98056 Package Minicast Pinning 1 = OUT, 2 = GND, 3 = V S Dimensions (mm) 5.0 W x 6.95 H x 4.8 D Mounting Leaded Application Presence sensors, fast proximity sensors BLOCK DIAGRAM PRESENCE SENSING 16833 8 +3 V 3 IR emitter V S 33 k Envelope 1 signal OUT 38 kHz Band Demo- Input AMP pass dulator +3 V 2 Out to C PIN GND Rev. 1.1, 17-Apr-2019 Document Number: 82869 1 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DD D TSSP980.. www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Supply voltage V -0.3 to +3.6 V S Supply current I 5mA S Output voltage V -0.3 to +3.6 V O Output current I 5mA O Junction temperature T 100 C j Storage temperature range T -25 to +85 C stg Operating temperature range T -25 to +85 C amb Power consumption T 85 C P 10 mW amb tot Note Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating onl y and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specificatio n is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability ELECTRICAL AND OPTICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT E = 0, V = 5 V I 0.25 0.37 0.45 mA v S SD Supply current (pin 3) E = 40 klx, sunlight I -0.8 - mA v SH Supply voltage V 2.0 - 3.6 V S E = 0, test signal see fig. 1, v Transmission distance IR diode TSAL6200, d- 8 - m I = 50 mA F 2 I = 0.5 mA, E = 2 mW/m , OSL e Output voltage low (pin 1) V - - 100 mV OSL test signal see fig. 1 Pulse width tolerance: 2 Minimum irradiance t - 5/f < t < t + 6/f , E -0.7 1.2 mW/m pi o po pi o e min. test signal see fig. 1 t - 5/f < t < t + 6/f , pi o po pi o 2 Maximum irradiance E 30 - - W/m e max. test signal see fig. 1 Angle of half transmission Directivity - 45 - 1/2 distance Rev. 1.1, 17-Apr-2019 Document Number: 82869 2 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000