UG30APT-E3, UG30BPT-E3, UG30CPT-E3, UG30DPT-E3 www.vishay.com Vishay General Semiconductor Dual Common Cathode Ultrafast Plastic Rectifier FEATURES Power pack Glass passivated pellet chip junction Ultrafast recovery time Low switching losses, high efficiency 3 Low forward voltage drop 2 1 High forward surge capability TO-3P (TO-247AD) Solder dip 275 C max., 10 s per JESD 22-B106 PIN 2 Material categorization: for definitions of compliance PIN 1 PIN 3 please see www.vishay.com/doc 99912 CASE TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS For use in high frequency rectifier of switching mode power I 30 A supplies, inverters, freewheeling diodes, DC/DC converters, F(AV) and other power switching application. V 50 V, 100 V, 150 V, 200 V RRM I 300 A FSM MECHANICAL DATA t 25 ns rr Case: TO-3P (TO-247AD) V at I 0.85 V F F Molding compound meets UL 94V-0 flammability rating T max. 150 C J Base P/N-E3 - RoHS-compliant, commercial grade Package TO-3P (TO-247AD) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD22-B102 Circuit configuration Common cathode E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: as marked Mounting Torque: 10 in-lbs max. ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL UG30APT UG30BPT UG30CPT UG30DPT UNIT Max. repetitive peak reverse voltage V 50 100 150 200 V RRM Max. RMS voltage V 35 70 105 140 V RMS Max. DC blocking voltage V 50 100 150 200 V DC Max. average forward rectified current at T = 120 C I 30 A C F(AV) Peak forward surge current 8.3 ms single half sine-wave I 300 A FSM superimposed on rated load per diode Operating and storage temperature range T , T -65 to +150 C J STG Revision: 27-May-2020 Document Number: 88762 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 UG30APT-E3, UG30BPT-E3, UG30CPT-E3, UG30DPT-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL UG30APT UG30BPT UG30CPT UG30DPT UNIT 15 A 1.0 Max. instantaneous forward 30 A T = 100 C V 1.15 V J F voltage per diode 10 A 0.85 = 25 C 15 T A Max. DC reverse current at rated I A R DC blocking voltage per diode T = 100 C 800 A I = 0.5 A, I = 1.0 A, F R Max. reverse recovery time t 25 ns rr I = 0.25 A rr I = 15 A, V = 30 V, T = 25 C 35 F R J Max. reverse recovery time dI/dt = 50 A/s, t ns rr T = 100 C 50 I = 10 % I J RR RM I = 15 A, V = 30 V, F R T = 25 C 22 J Max. recovered stored charge dI/dt = 50 A/s, Q nC rr T = 100 C 50 I = 10 % I J RR RM Typical junction capacitance 4.0 V, 1 MHz C 70 pF J THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL UG30APT UG30BPT UG30CPT UG30DPT UNIT (1) Typical thermal resistance per diode R 2.0 C/W JC Note (1) Thermal resistance from junction to case per diode mounted on heatsink ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-247AD UG30DPT-E3/45 6.15 30 30/tube Tube Revision: 27-May-2020 Document Number: 88762 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000